Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V. K. Yang"'
Autor:
C. W. Leitz, G. Braithwaite, F. Singaporewala, V. K. Yang, T. A. Langdo, J. Yap, H. Badawi, Mark Somerville, John A. Carlin, J.G. Fiorenza, Anthony Lochtefeld, Mayank T. Bulsara, Matthew T. Currie
Publikováno v:
Semiconductor Science and Technology. 19:L4-L8
This paper studies the effect of the strained silicon thickness on the characteristics of strained silicon MOSFETs on SiGe virtual substrates. NMOSFETs were fabricated on strained silicon substrates with various strained silicon thicknesses, both abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f67b6d6972734e7bc567ce95695d03
https://doi.org/10.1088/0268-1242/19/1/l02
https://doi.org/10.1088/0268-1242/19/1/l02
Autor:
V. K. Yang, John A. Carlin, M. T. Currie, M. T. Bulsara, H. Badawi, Mark Somerville, A. Lochtefeld, J.G. Fiorenza, Z.Y. Cheng, T. A. Langdo, C. Leitz, G. Braithwaite
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
This paper investigates off-state current leakage in strained silicon NMOSFETs built on supercritical thickness strained silicon films. it describes a simple conceptual model for the off-state leakage: the leakage is caused by enhanced dopant diffusi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9310211e3b66226beb9d5bfec41d1597
https://doi.org/10.1109/relphy.2004.1315378
https://doi.org/10.1109/relphy.2004.1315378
Autor:
H. Badawi, Christopher J. Vineis, A. Lochtefeld, M. T. Currie, M. Erdtmann, M. T. Bulsara, J. Carlin, Z.Y. Cheng, Christopher W. Leitz, G. Braithwaite, T. A. Langdo, C. Major, V. K. Yang
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b776cef679c9f59581b90102e0ecd89
https://doi.org/10.7567/ssdm.2003.d-8-5l
https://doi.org/10.7567/ssdm.2003.d-8-5l
Autor:
V. K. Yang, Max D. Gunzburger
Publikováno v:
Zeitschrift für angewandte Mathematik und Physik ZAMP. 24:83-104
Various aspects of the diffraction of plane shock waves by moving antisymmetric thin bodies are examined. A method is presented for removing the inhomogeneity in the shock condition. This is done without knowledge of the explicit form of the solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd372b15b0091bf91be5a786a05b57bf
https://doi.org/10.1007/bf01594000
https://doi.org/10.1007/bf01594000