Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. K. Vasiliev"'
Autor:
A. V. Antonov, S. S. Ustavschikov, D. A. Savinov, David Tetelbaum, M. A. Galin, D. V. Masterov, S. V. Morozov, A. I. El’kina, S. A. Pavlov, Pavel A. Yunin, V. K. Vasiliev, Alexey Mikhaylov, A. E. Parafin
Publikováno v:
Physics of the Solid State. 62:1598-1603
The original research results for thin disordered HTSC films based on YBCO are presented in this article. Several experiments have been carried out to confirm a theoretical prediction that the s-phase of superconducting pairing in disordered d-type s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfcf64b8210fcb184709df47dcee5eb2
https://doi.org/10.1134/s1063783420090036
https://doi.org/10.1134/s1063783420090036
Autor:
V. K. Vasiliev, Alena Nikolskaya, Dmitry Korolev, Sergey Nagornykh, David Tetelbaum, Alexey Mikhaylov, V. I. Pavlenkov, A. N. Tereshchenko, Alexey Belov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 472:32-35
The goal of this work is the qualitative and quantitative interpretation of experimental data obtained for the effect of additional boron ion implantation on the temperature dependence of dislocation-related luminescence (D1 line) of self-implanted s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b968ba14ad0fe19d03235699fc22e561
https://doi.org/10.1016/j.nimb.2020.03.032
https://doi.org/10.1016/j.nimb.2020.03.032
Autor:
V. K. Vasiliev
Publikováno v:
Critique and Semiotics. 38:364-379
The unicity of Shukshin’s oeuvre is that from the middle of 1960s when he is consciously seeking for and invents coding tools of his creations. The author himself has pointed out some methods of «code» creation. He pays attention to the “change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28406e18c19cdcecbcafd80f15996d03
https://doi.org/10.25205/2307-1737-2020-2-364-379
https://doi.org/10.25205/2307-1737-2020-2-364-379
Autor:
V. K. Vasiliev, Dmitriy Smolyakov, A. S. Tarasov, David Tetelbaum, A. V. Lukyanenko, F. A. Baron, Alena Nikolskaya, M. V. Dorokhin
Publikováno v:
Materials Letters. 308:131244
The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cec2f8e87e28b9067771ba9c4891fc16
https://doi.org/10.1016/j.matlet.2021.131244
https://doi.org/10.1016/j.matlet.2021.131244
Autor:
D. E. Nikolitchev, Davud V. Guseinov, D. A. Pavlov, David Tetelbaum, A. I. Belov, A. N. Mikhaylov, A. V. Pirogov, D. S. Korolev, Andrey A. Shemukhin, V. K. Vasiliev, A. V. Nezhdanov, E. V. Okulich, S. I. Surodin
Publikováno v:
Semiconductors. 50:271-275
The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2b295ea17c79332cf2e51eb8b848de3
https://doi.org/10.1134/s1063782616020135
https://doi.org/10.1134/s1063782616020135
Autor:
D. I. Tetelbaum, D. S. Korolev, S. A. Pavlov, A. E. Parafin, A. N. Mikhaylov, D. V. Masterov, A. I. Okhapkin, E. V. Skorokhodov, S. A. Korolev, P. A. Yunin, V. K. Vasiliev
Publikováno v:
Поверхность. Рентгеновские, синхротронные и нейтронные исследования. :80-83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ceead7859be8c8c82a7c269a333016
https://doi.org/10.7868/s0207352816040211
https://doi.org/10.7868/s0207352816040211
Autor:
A. V. Ikonnikov, D. V. Masterov, P. A. Yunin, D. I. Tetelbaum, S. S. Ustavschikov, Alexey Mikhaylov, A. V. Antonov, S. V. Morozov, V. K. Vasiliev, S. A. Pavlov, A. E. Parafin, D. A. Savinov, Yu. N. Nozdrin
Publikováno v:
Physica C: Superconductivity and its Applications. 568:1353581
We report the effect of disorder on superconducting phase transition of YBa 2 Cu 3 O 7 − x epitaxial thin films in external magnetic fields. The disorder was produced by several successive acts of oxygen ion implantation. Controlling a total accumu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a9e0260d956191b3c7665da23b40dfa
https://doi.org/10.1016/j.physc.2019.1353581
https://doi.org/10.1016/j.physc.2019.1353581
Autor:
D. S. Korolev, David Tetelbaum, S. A. Pavlov, A. I. Okhapkin, D. V. Masterov, S. A. Korolev, Alexey Mikhaylov, A. E. Parafin, V. K. Vasiliev, Pavel A. Yunin, E. V. Skorokhodov
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:438-440
The formation of a topological structure in thin films of the high-temperature superconductor YBa2Cu3O7–δ (YBCO) using ion implantation is studied. The crystal structure and electrical properties of the initial film and the formed insulating regio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a016b14d8834ff268267c8936b715374
https://doi.org/10.1134/s1027451016020403
https://doi.org/10.1134/s1027451016020403
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476ca2fa54bc1dc49a151d47fd49430d
https://doi.org/10.1063/1.4998859
https://doi.org/10.1063/1.4998859
Publikováno v:
AIP Conference Proceedings.
In this paper, the analysis of the possible replacement of existing multistage membrane and reciprocating compressor units with a set of slow-speed long-stroke compressor stages is carried out. The possibility of replacing the existing multi-stage me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05925361a8f11a53cf0a4e20f82f8312
https://doi.org/10.1063/1.4998858
https://doi.org/10.1063/1.4998858