Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V. K. Kamineni"'
Autor:
Larose Joshua, Y. Le Tiec, Bruce B. Doris, Alain C. Diebold, Q. B. Vu, V. K. Kamineni, J. Fullam, L. Grenouillet, Nicolas Posseme, M. Vinet
Publikováno v:
IEEE 2011 International SOI Conference.
For silicon thickness measurements by ellipsometry, if a high precision is required, i.e. if the thickness has to be known better than 10%, use of an optimized model becomes mandatory. The improvement of the model is consistent with previous measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8043ac64a4794dd7cb0d9c3660e333d2
https://doi.org/10.1109/soi.2011.6081709
https://doi.org/10.1109/soi.2011.6081709
Autor:
C. M. Settens, V. K. Kamineni, G. A. Antonelli, A. Grill, A. C. Diebold, R. J. Matyi, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
X‐ray scattering is a non‐destructive analytical technique capable of detecting electron density fluctuations in mesoporous and nanoporous structures. X‐ray methods have the potential to provide fully quantitative porosity analyses of open and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbcb5e0b5cf608c631dbdaa2f5efce83
https://doi.org/10.1063/1.3251214
https://doi.org/10.1063/1.3251214
Autor:
V. K. Kamineni, C. M. Settens, A. Grill, G. A. Antonelli, R. J. Matyi, A. C. Diebold, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
Variable angle spectroscopic ellipsometry (VASE) measurements from 30 μm (infrared) to 150 nm (vacuum ultraviolet) were used to measure the thickness, pore volume fraction, gradation in the refractive index and chemical bonding of porous low‐κ fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba92a65be6578de17bc7bff9a63a735
https://doi.org/10.1063/1.3251215
https://doi.org/10.1063/1.3251215
Autor:
V. K. Kamineni, M. Raymond, E. J. Bersch, B. B. Doris, A. C. Diebold, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
Spectroscopic ellipsometry (SE) and resistivity measurements were used to characterize Nickel‐metal films used for self‐aligned silicidation process. Variable angle spectroscopic ellipsometer (VASE) in the VUV range of wavelengths was used to mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee1bdab2b0f55fac3737d4055b32974
https://doi.org/10.1063/1.3251204
https://doi.org/10.1063/1.3251204