Zobrazeno 1 - 10
of 16
pro vyhledávání: '"V. K. Eu"'
Publikováno v:
Journal of Electronic Materials. 11:1083-1114
We compare the chemical profiles of Cr, Mn, Si and Se with the electron concentration profiles in Si, Se and S implanted semi-insulating Cr-O doped bulk GaAs substrates and undoped VPE buffer layers annealed with and without a SiO2 encapsulant in a H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99dc57bd2af0c13b0452bc65f6f6025b
https://doi.org/10.1007/bf02658918
https://doi.org/10.1007/bf02658918
Publikováno v:
Journal of Electronic Materials. 11:663-688
This paper describes the Si-doping of GaAs that was grown using the AsCl3:H2:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl3:SiCl4 liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbe55aded947804322ba6f9fc850a70
https://doi.org/10.1007/bf02672390
https://doi.org/10.1007/bf02672390
Publikováno v:
Journal of Applied Physics. 52:2990-2993
We have studied, compared, and correlated the chemical redistribution of Cr and Si, electrical profiles, mobilities, carrier concentrations, and channel conduction currents in Si‐implanted semi‐insulating GaAs substrates annealed with and without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7e4ae8be77885dcebcdb7a03aa5a07
https://doi.org/10.1063/1.329042
https://doi.org/10.1063/1.329042
Autor:
Milton Feng, R. D. Burnham, Louis J. Guido, K. C. Hsieh, Nick Holonyak, V. K. Eu, R. W. Kaliski
Publikováno v:
Journal of Applied Physics. 61:1329-1334
Extensive data are presented on impurity‐induced layer disordering (IILD) of AlxGa1−xAs‐GaAs quantum‐well heterostructures and superlattices that are Si implanted and annealed (Si+‐IILD) at three different implant doses. We show that impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b07e1128c9aecce343c38aa322f1c7
https://doi.org/10.1063/1.338111
https://doi.org/10.1063/1.338111
Publikováno v:
Journal of Applied Physics. 56:1171-1176
This paper presents an investigation of the effects of implantation energy and dose on the noise figure and associated gain of low noise GaAs metal‐semiconductor field effect transistors. Our results show that the noise figure and associated gain i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a5f51267f948ee426aeae67cd31b64
https://doi.org/10.1063/1.334045
https://doi.org/10.1063/1.334045
Publikováno v:
Applied Physics Letters. 44:231-233
High‐performance, ion‐implanted GaAs metal‐semiconductor field‐effect transistors for operation in the frequency range 10–60 GHz have demonstrated noise figures of 1.15 dB at 12 GHz and 1.63 dB at 18 GHz. A single‐stage amplifier has demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccb067dede43a88171db4ebba32ae39
https://doi.org/10.1063/1.94681
https://doi.org/10.1063/1.94681
Autor:
R. D. Burnham, Louis J. Guido, Kathleen Meehan, V. K. Eu, Nick Holonyak, P. Gavrilovic, Milton Feng
Publikováno v:
Applied Physics Letters. 47:903-905
The Si impurity is implanted into an Al x Ga1−x As‐GaAs quantum wellheterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc21fe52bb2eb7f513d1188272ca811
https://doi.org/10.1063/1.95973
https://doi.org/10.1063/1.95973
Publikováno v:
IEEE Electron Device Letters. 5:18-20
Low-noise GaAs metal-semiconductor field-effect transistors (MESFET's) have been made using ion-implanted metal organic chemical vapor deposition (MOCVD) buffer layers. A noise figure of 1.46 dB with 10.20 associated gain has been achieved at 12 GHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::223d54fdfbff017c8d80d76e1438e3bf
https://doi.org/10.1109/edl.1984.25816
https://doi.org/10.1109/edl.1984.25816
Publikováno v:
Applied Physics Letters. 40:802-804
Low noise GaAs metal‐semiconductor field‐effect transitors (MESFET’s) have been made by direct ion implantation into high pressure liquid encapsulated Czochralski (HPLEC) undoped substrates and unintentionally doped high resistivity buffer laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a9329b2f33967b02ba21c9da5d04911
https://doi.org/10.1063/1.93265
https://doi.org/10.1063/1.93265
Publikováno v:
Journal of Applied Physics. 53:1266-1268
Multilevel Si‐doped GaAs epitaxial layers with abrupt interfaces can be grown using a single AsCl3:SiCl4 liquid doping source with a constant doping flow rate in an AsCl3/H2/Ga chemical vapor deposition system. Doping variations are achieved by adj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::116120829258cb1931f02e24d91b588b
https://doi.org/10.1063/1.330585
https://doi.org/10.1063/1.330585