Zobrazeno 1 - 10
of 82
pro vyhledávání: '"V. Jucienė"'
Publikováno v:
Semiconductors. 48:1557-1561
The possibilities of distinguishing highly coherent terahertz emission at a specified frequency from the incoherent thermal emission of a hot body are considered. It is experimentally shown that the smooth planar surface (with no diffraction guides)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00c3a2c98742caf1dfe28969be84acb1
https://doi.org/10.1134/s106378261412015x
https://doi.org/10.1134/s106378261412015x
Publikováno v:
Applied Physics A. 115:199-202
The thermally stimulated excitation of radiative modes of surface plasmon–phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation selective emission is studied and experimentally observed. The selective high-power THz radiati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157423fad408198722ecb472e38af4f2
https://doi.org/10.1007/s00339-013-7931-9
https://doi.org/10.1007/s00339-013-7931-9
Autor:
K. Požela, S. S. Pushkarev, G. B. Galiev, E. A. Klimov, V. Jucienė, Yu. Požela, I. S. Vasil’evskii, A. Šilenas
Publikováno v:
Semiconductors. 47:372-375
The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26444c83ebb575311374e0aca0961626
https://doi.org/10.1134/s1063782613030263
https://doi.org/10.1134/s1063782613030263
Publikováno v:
Applied Physics A. 110:153-156
Surface phonon and plasmon–phonon polariton characteristics of GaAs, Al x Ga1−x As/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5062c8735473cbb7072b5740d78575e
https://doi.org/10.1007/s00339-012-7473-6
https://doi.org/10.1007/s00339-012-7473-6
Publikováno v:
Applied Physics A. 109:233-237
The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ceaa9d67138cd5d2884f53c312287d
https://doi.org/10.1007/s00339-012-7039-7
https://doi.org/10.1007/s00339-012-7039-7
Publikováno v:
Semiconductors. 45:761-765
The field dependence of drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures is calculated by the Monte Carlo method. The influence of varying the molar fractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a4d9fd04ba4dc8123ef9e4a375e6fa7
https://doi.org/10.1134/s1063782611060212
https://doi.org/10.1134/s1063782611060212
Autor:
G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, K. Požela, V. Jucienė, J. Požela, Yu. A. Matveev, A. Sužiedėlis, Č. Paškević
Publikováno v:
Semiconductors. 44:898-903
The electron conduction in a two-dimensional channel of an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) with a δ-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers into the QW reduces th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba00c47b8c2c5658927f28b62795c2b7
https://doi.org/10.1134/s1063782610070122
https://doi.org/10.1134/s1063782610070122
Autor:
V. Jucienė, S. S. Mikhrin, V. S. Mikhrin, K. Požela, J. Požela, A. Sužiedėlis, A. S. Shkolnik
Publikováno v:
Semiconductors. 43:1590-1596
The scattering rate of electrons in a quantum well by localized polar optical and interface phonons is considered. The dependence of the force of the electron-phonon interaction on the frequency of optical phonons in materials of the heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15189f363c72d9ef73cb4cf5ac4fc9e8
https://doi.org/10.1134/s1063782609120033
https://doi.org/10.1134/s1063782609120033
Autor:
Č. Paškević, V. G. Mokerov, I. S. Vasil’evskii, A. Sužiedėlis, J. Požela, K. Požela, G. B. Galiev, V. Jucienė
Publikováno v:
Semiconductors. 43:458-462
It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and pseudoamorphous Al0.36Ga0.64As/In0.15Ga0.85 As heterostructures is higher than the maximum drift velocit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976a0041fcc8fda538f88ce961fad9cc
https://doi.org/10.1134/s1063782609040095
https://doi.org/10.1134/s1063782609040095
Publikováno v:
Acta Physica Polonica A. 113:989-992
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1989aee3d380c218ede73fa3f8e44748
https://doi.org/10.12693/aphyspola.113.989
https://doi.org/10.12693/aphyspola.113.989