Zobrazeno 1 - 10
of 62
pro vyhledávání: '"V. Jasutis"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 546:228-231
A study is presented of the influence of alpha-particle irradiation on the current and optical responses of graded-gap Al x Ga 1− x As detectors for alpha-particle and X-ray radiation. The current response of the detector decreases by about an orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c148fba165d605e8ce58168d61e75f
https://doi.org/10.1016/j.nima.2005.03.049
https://doi.org/10.1016/j.nima.2005.03.049
Publikováno v:
Semiconductors. 38:1111-1114
The effect of irradiation with α particles on the current and optical responses of graded-gap AlxGa1−xAs/GaAs detectors of α particles and X-ray photons is studied. It is established that a reduction in both the current and optical response is ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4032800d46e680c850b827380607bee
https://doi.org/10.1134/1.1797495
https://doi.org/10.1134/1.1797495
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 509:30-33
An increase in sensitivity of the graded-gap AlxGa1−xAs/GaAs X-ray detectors is achieved using multiplication of charge generated in a detector body. A thin n-GaAs layer was grown on a narrow-gap side of the AlxGa1−xAs structure. This layer is us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5cd3b169b41c103d89ecf6b5700dd7
https://doi.org/10.1016/s0168-9002(03)01544-4
https://doi.org/10.1016/s0168-9002(03)01544-4
Publikováno v:
Acta Physica Polonica A. 103:77-83
La 1 - x MnO 3 films grown by metal organic chemical vapor deposition technique on r-plane cut Al 2 O 3 substrates were investigated. The change of the optical response over the La 1 - x MnO 3 /Al 2 O 3 sample surface was investigated along with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f47f87732e2d8abcb1a769c4f2ac062
https://doi.org/10.12693/aphyspola.103.77
https://doi.org/10.12693/aphyspola.103.77
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:54-59
Graded-gap Al x Ga 1− x As/GaAs X-ray detectors with photovoltaic response have been designed and fabricated. A charge collection efficiency of 100% has been achieved in an Al x Ga 1− x As layer with a thickness of 15 μm without application of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1f8e0c63b4a858192015b2b6a223e2
https://doi.org/10.1016/s0168-9002(02)00945-2
https://doi.org/10.1016/s0168-9002(02)00945-2
Autor:
G.-J. Babonas, I. Simkiene, Wolf Assmus, R. Sterzel, V. Karpus, A. Suchodolskis, A. Reza, V. Jasutis
Publikováno v:
Philosophical Magazine Letters. 82:157-165
Faceted etch pits have been observed on chemically etched single-grain icosahedral Zn-Mg-Y quasicrystal samples with C 2, C 3 and C 5 symmetry rotation axes perpendicular to their surfaces. The anisotropic etching was produced by 2.5-5%HCl solution i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a01f135b60da51a7aba6e70d5a9256a
https://doi.org/10.1080/095008302317262660
https://doi.org/10.1080/095008302317262660
Publikováno v:
Materials Science Forum. :287-290
Fast graded-gap Al x Ga 1-x As/GaAs soft X-ray detector with sensitivity in the range of 10 3 -10 4 V/W was created. The delay time of photovoltage response in the p-Al x Ga 1-x As/n-GaAs detector is 50 ms, while photovoltage response in the p - -GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a51c9e6e8c3861fd886a2091eefcdb9
https://doi.org/10.4028/www.scientific.net/msf.384-385.287
https://doi.org/10.4028/www.scientific.net/msf.384-385.287
Publikováno v:
Semiconductors. 36:116-120
The current response of AlxGa1−x As graded-gap layers to optical and X-ray radiation was studied. A graded-gap electric field in the 15-µm-thick AlxGa1−x As layers, with x varying from 0 to 0.4, ensures the complete collection of charges generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dda8b87abcfbb217f85a61474d8663b
https://doi.org/10.1134/1.1434523
https://doi.org/10.1134/1.1434523
Autor:
K Naudžius, R.A. Bendorius, J. Sabataityt, V. Jasutis, K. Grigoras, I. Šimkien, Vaidas Pačebutas, H. Tvardauskas
Publikováno v:
Materials Science and Engineering: C. 19:155-159
Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM and optical methods. The morphology, chemical composition and photoluminescence of porous layers were investigated. It was shown that porous layer consists of Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd978a8ce8fa1d10b568304d73a3fac
https://doi.org/10.1016/s0928-4931(01)00475-1
https://doi.org/10.1016/s0928-4931(01)00475-1
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466:58-62
It has been observed that only a part of the Al x Ga 1− x As graded-gap layer with the energy gap gradient g >20 eV/cm is active as a X-ray luminescence source. The thickness of the active layer is 30–50 μm. To increase the detectors optical res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a89b61d4b326d2f87f3c5500cde7531c
https://doi.org/10.1016/s0168-9002(01)00825-7
https://doi.org/10.1016/s0168-9002(01)00825-7