Zobrazeno 1 - 10 of 27 pro vyhledávání: '"V. J. Silvestri"'
1
ULSI Quality Silicon Epitaxial Growth at 850°C
Autor: K. Nummy, V. J. Silvestri, R. Bendernagel, J. Hann, V. T. Phan, D. Kerr, J. O. Borland, P. Ronsheim
Publikováno v: Journal of The Electrochemical Society. 137:2323-2327
ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850 o C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b3c6b97bd51aa803c305b22af27c1766
https://doi.org/10.1149/1.2086935
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2
Trench Isolation by Selective Epi and CVD Oxide Cap
Autor: V. J. Silvestri, J. S. Makris, W. Guthrie, K. D. Beyer
Publikováno v: Journal of The Electrochemical Society. 137:3951-3953
A dielectric isolation process is described which produces device areas defined by deep vertical trenches. The trenches consist of a triple dielectric sidewall with an open trench bottom, a partial silicon trench fil formed by selective silicon epita
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::09eb525216f59e964100da0337142c5f
https://doi.org/10.1149/1.2086335
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3
ChemInform Abstract: ULSI Quality Silicon Epitaxial Growth at 850 °C
Autor: J. O. Borland, D. Kerr, V. J. Silvestri, K. Nummy, R. Bendernagel, J. Hann, V. T. Phan, P. Ronsheim
Publikováno v: ChemInform. 21
ULSI quality silicon epitaxial films as thin as 0.6 μm have been grown using dichlorosilane at temperatures as low as 850 o C and pressures as low as 10 torr in commercially available cylindrical epi reactors. Removal of the substrate surface native
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbc79947a867886c90c413bc9e566a4c
https://doi.org/10.1002/chin.199037341
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7
Submicron Epitaxial Films
Autor: B. Ginsberg, V. J. Silvestri, G. R. Srinivasan
Publikováno v: Journal of The Electrochemical Society. 131:877-881
On evalue la qualite du silicium epitaxique depose pour l'epaisseur totale 0,5 a 0,9 μm a partir de l'interface physique initial, le potentiel des couches minces correspondant a des jonctions peu profondes, et les niveaux des defauts. L'analyse mont
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b916a35d6387e79afa9cfc85a6130ab
https://doi.org/10.1149/1.2115719
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8
Pre‐ and Postepitaxial Gettering of Oxidation and Epitaxial Stacking Faults in Silicon
Autor: V. J. Silvestri, M. C. Chen
Publikováno v: Journal of The Electrochemical Society. 128:389-395
Certain gettering treatments on the back sides of wafers have been found to be effective in reducing stacking faults in Si bulk wafers. In this study results are reported for various back side, front side, and combined gettering processes on wafers u
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::deebd43eb7207a0f48161e9cf1e4d306
https://doi.org/10.1149/1.2127428
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10
Selective Epitaxial Trench (SET)
Autor: V. J. Silvestri
Publikováno v: Journal of The Electrochemical Society. 135:1808-1812
Les tranchees profondes sont importantes pour l'isolation electrique dans les circuits integres et pour les cellules des capacites des memoires a acces direct dynamiques. Des methodes de remplissage des tranchees par le silicium polycristallin sont c
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::291c60b5c70e7e7f67efcdc401391bfe
https://doi.org/10.1149/1.2096136
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