Zobrazeno 1 - 2
of 2
pro vyhledávání: '"V. J. Sferrino"'
Autor:
R. Blanchard, B-Y. Tsaur, Chenson Chen, H. K. Choi, J. T. Schott, D. C. LaPierre, V. J. Sferrino, R. W. Mountain, W. M. Shedd
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1372-1376
The effects of total-dose radiation have been investigated for the first complementary JFETs fabricated in zone-melting-recrystallized (ZMR) Si films on SiO2-coated Si substrates. With a -5 V bias applied to the Si substrate during irradiation and de
Autor:
V. J. Sferrino, J. L. Ryan
A Silicon Surface Barrier Detector Electron Telescope measuring Integral and Differential Electron Energy Spectra over the range of 130 KEV to 4.5 MEV was placed into orbit in late 1965. The initial orbit had an inclination of 26.6 degrees, apogee of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::020cdad1278aa25697f82792a867ea97
https://doi.org/10.21236/ad0649139
https://doi.org/10.21236/ad0649139