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Ultrafast Sweep-Tuned Spectrum Analyzer with Temporal Resolution Based on a Spin-Torque Nano-Oscillator

Autor: Bernard Dieny, V. Iurchuk, A. N. Litvinenko, Vasyl Tyberkevych, Andrei Slavin, Jia Li, A. S. Jenkins, Steven Louis, Pankaj Sethi, Ursula Ebels, Ricardo Ferreira

Publikováno v: Nano Letters

We demonstrate that a spin-torque nano-oscillator (STNO) rapidly sweep-tuned by a bias voltage can be used to perform an ultrafast time-resolved spectral analysis of frequency-manipulated microwave signals. The critical reduction in the time of the s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a15760b1b5afd6146ba4a78504edb376
https://doi.org/10.1021/acs.nanolett.0c02195

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Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy

Autor: A. Sidi El Valli, V. Iurchuk, G. Lezier, I. Bendjeddou, R. Lebrun, N. Lamard, A. Litvinenko, J. Langer, J. Wrona, L. Vila, R. Sousa, I. L. Prejbeanu, B. Dieny, U. Ebels

Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output dc voltage using magnetic tunnel junctions (MTJ) with strong perpendi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82d7f220989881af8d85bbb3de5c7f93
http://arxiv.org/abs/2110.14501

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Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Autor: Guillaume Prenat, Rui Ma, Laurent Vila, Ahmed Sidi El Valli, V. Iurchuk, J. Wrona, Jürgen Langer, Gregory Di Pendina, Ricardo C. Sousa, Ioan Lucian Prejbeanu, Florian Protze, A. Chavent, Martin Kreisig, Ursula Ebels, Frank Ellinger

Publikováno v: Electronics Letters, Vol 57, Iss 6, Pp 264-266 (2021)
Electronics Letters
Electronics Letters, IET, 2021, 57 (6), pp.264-266. ⟨10.1049/ell2.12103⟩
Electronics Letters, 2021, 57 (6), pp.264-266. ⟨10.1049/ell2.12103⟩

International audience; This letter presents magnetic tunnel junction based spintronic devices completely implemented in a hybrid semiconductor process that comprises a complementary metal oxide semiconductor and a magnetic tunnel junction technology

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e26d6fca1716d2c0345f6621758cff84
https://doaj.org/article/2388abea66f84c04b71967503b273adb

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Stress-induced modification of gyration dynamics in stacked double-vortex structures studied by micromagnetic simulations

Autor: Jürgen Lindner, Jürgen Faßbender, Attila Kákay, V. Iurchuk, Alina M. Deac, L Körber

Publikováno v: Journal of Physics D: Applied Physics 54(2021), 47

In this paper, using micromagnetic simulations, we investigate the stress-induced frequency tunability of double-vortex nano-oscillators comprising magnetostrictive and non-magnetostrictive ferromagnetic layers separated vertically by a non-magnetic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3eec270bc8d6b5f681a586dcab4097c7
https://www.hzdr.de/publications/Publ-33127-1

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A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality

Autor: B. Dieny, Laurent Vila, Nathalie Lamard, G. Di Pendina, Guillaume Prenat, Ursula Ebels, Ioan Lucian Prejbeanu, Y. Bel, A. Chavent, J. Wrona, L Tillie, V. Iurchuk, Ricardo C. Sousa, Jürgen Langer

Publikováno v: Journal of Magnetism and Magnetic Materials
Journal of Magnetism and Magnetic Materials, Elsevier, 2020, 505, pp.166647. ⟨10.1016/j.jmmm.2020.166647⟩
Journal of Magnetism and Magnetic Materials, 2020, 505, pp.166647. ⟨10.1016/j.jmmm.2020.166647⟩

International audience; The objective of this study is to co-integrate multiple digital and analog functions together within CMOS by developing a universal magnetic tunneling junction stack (MTJ) capable of realizing logic, memory, and analog functio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5344472b5d481404d07286056327e196
https://hal.archives-ouvertes.fr/hal-03111526

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Magnetic Random Access Memories (MRAM) beyond Information Storage

Autor: Guillaume Prenat, A. Chavent, V. Iurchuk, Jürgen Langer, B. Dleny, J. Wrona, Ursula Ebels, G. Di Pendina, Ricardo C. Sousa, Ioan Lucian Prejbeanu, Laurent Vila

Publikováno v: 2020 IEEE Symposium on VLSI Technology
2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. ⟨10.1109/VLSITechnology18217.2020.9265053⟩

Magnetic random access memory (MRAM) is now available as embedded memory from major CMOS foundries. In this study, we demonstrated that slightly modified magnetic tunnel junctions than those used in conventional STT -MRAM can be used for multifunctio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75bcb18046fb5fa0ef865d43f00ec9c1

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Akademický článek

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Akademický článek

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Akademický článek

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