Zobrazeno 1 - 10
of 105
pro vyhledávání: '"V. I. Zubkov"'
Autor:
V. I. Zubkov
Publikováno v:
Vestnik Moskovskogo Universiteta: Seriâ 18, Sociologiâ i Politologiâ, Vol 27, Iss 3, Pp 187-208 (2021)
The article is devoted to the problem of professional selection of personnel in private security organizations. This problem is relevant, since a significant (and even excessive) number of employees are engaged in security activities in the Russian e
Publikováno v:
Industrial laboratory. Diagnostics of materials. 87:35-44
The properties of interfaces in the heterostructures which frequently govern their operation are of particular importance for the devices containing heterostructures as active elements. Any further improving of the characteristics of semiconductor de
Autor:
V. I. Zubkov, G Yakovlev
Publikováno v:
Journal of Solid State Electrochemistry. 25:797-802
A novel electrochemical profiling technique consisting in integration capacitance–voltage characteristics was proposed, developed and proven. The aim is to overcome the insufficient resolution in charge carrier concentration measurements during com
Autor:
G Yakovlev, V. I. Zubkov
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:73-80
The near-surface “dead-layer” nature and its negative impact on back-side-illuminated charge-coupled devices (CCDs) have been investigated in detail. Special attention is devoted to the analysis of methods for the “dead-layer” eliminating. Th
Autor:
A. V. Nikolaev, Mikhail R. Ainbund, Vladimir V. Zabrodskii, Andrey V. Pashuk, V. I. Zubkov, A V Solomonov, Denis E. Mironov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 22, Iss 5, Pp 80-92 (2019)
Introduction. In recent decades, in the field of photoelectronics, special attention has been paid to the development of semiconductor matrix photodetectors. These detectors have become an effective alternative to existing television receiving system
Publikováno v:
Materials Research Innovations. 24:402-408
Gallium nitride transistors with high electron mobility (HEMT) have been studied by means of electrochemical capacitance–voltage (ECV) technique. The capacitance–voltage characteristics at various ...
Publikováno v:
Technical Physics Letters. 45:890-893
Electrochemical capacitance–voltage profiling has been used to examine heterojunction solar cells based on single-crystal silicon. Specific features of the electrochemical capacitance–voltage profiling of modern multilayer heterojunction solar ce
Publikováno v:
TURKISH JOURNAL OF PHYSICS. 43:243-251
We present experimental and theoretical investigations of pHEMT heterostructures with AlGaAs/InGaAs/GaAs quantum wells (QWs) and/or a delta-doped layer, which can be used as active regions in transistors operating in the 4-18 GHz frequency range. Usi
Publikováno v:
Semiconductors. 53:268-272
The specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal m
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 0, Iss 5, Pp 44-50 (2018)
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors. As the experimental techniques, the electro