Zobrazeno 1 - 2
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pro vyhledávání: '"V. I. Yashnik"'
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
The doping of CZ silicon with the isovalent impurity germanium is known to lead to a decrease in the rate of thermal donor (TD) formation during heat treatment at 450–650 °C [1,2]. This effect is still not completely understood. Some authors sugge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9818d0e83c72800912a5dacd30bb8659
https://doi.org/10.1007/978-94-009-0355-5_27
https://doi.org/10.1007/978-94-009-0355-5_27
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
The VO- or A-centre is known to be the main oxygen-related radiation defect CZ silicon and germanium. Its structure and annealing kinetics have been extensively investigated previously [1-7].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d5a08e1291cbb236f69ff8b0700491
https://doi.org/10.1007/978-94-009-0355-5_28
https://doi.org/10.1007/978-94-009-0355-5_28