Výsledky vyhledávání - "V. I. Yashnik"

Influence of Isovalent Doping on the Processes of Thermal Donors Formation in Silicon

Autor: V. V. Shumov, L. I. Khirunenko, V. I. Yashnik, V. I. Shakhovtsov

Publikováno v: Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457

The doping of CZ silicon with the isovalent impurity germanium is known to lead to a decrease in the rate of thermal donor (TD) formation during heat treatment at 450–650 °C [1,2]. This effect is still not completely understood. Some authors sugge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9818d0e83c72800912a5dacd30bb8659
https://doi.org/10.1007/978-94-009-0355-5_27

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Some Properties of Oxygen-Related Radiation Induced Defects in Silicon and Germanium

Autor: V. I. Shakhovtsov, V. V. Shumov, L. I. Khirunenko, V. I. Yashnik

Publikováno v: Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457

The VO- or A-centre is known to be the main oxygen-related radiation defect CZ silicon and germanium. Its structure and annealing kinetics have been extensively investigated previously [1-7].

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9d5a08e1291cbb236f69ff8b0700491
https://doi.org/10.1007/978-94-009-0355-5_28

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Akademický článek

Divacancy-tin related defects in irradiated germanium.

Autor: Khirunenko, L. I., Sosnin, M. G., Duvanskii, A. V., Abrosimov, N. V., Riemann, H.

Publikováno v: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 7p, 3 Charts, 7 Graphs

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Akademický článek

Residual stresses in silicon and their evolution upon heat treatment and irradiation.

Autor: Matyash, I.¹, Minailova, I.¹ irinaminailiva125@gmail.com, Serdega, B.¹, Khirunenko, L.²

Publikováno v: Semiconductors. Sep2017, Vol. 51 Issue 9, p1107-1110. 4p.

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Akademický článek

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin.

Autor: Angeletos, T., Sgourou, E. N., Andrianakis, A., Diamantopoulou, A., Chroneos, A., Londos, C. A.

Publikováno v: Journal of Applied Physics; 2015, Vol. 118 Issue 1, p1-8, 8p, 2 Charts, 13 Graphs

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Akademický článek

Oxygen precipitation in 10²⁰cm^-3 germanium-doped Czochralski silicon.

Autor: Peng Dong, Jian Zhao, Xingbo Liang, Daxi Tian, Shuai Yuan, Xuegong Yu, Xiangyang Ma, Deren Yang

Publikováno v: Journal of Applied Physics; 1/14/2015, Vol. 117 Issue 2, p025705-1-025705-6, 6p, 1 Chart, 4 Graphs

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Akademický článek

Vacancy-oxygen defects in p-type Si1-xGex.

Autor: Sgourou, E. N., Londos, C. A., Chroneos, A.

Publikováno v: Journal of Applied Physics; 2014, Vol. 116 Issue 13, p133502-1-133502-6, 6p, 8 Graphs

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Akademický článek

Investigation of the influence of isovalent impurity of silicon and γ-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge (Sb).

Autor: Gaidar, G. P.¹ gaydar@kinr.kiev.ua

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014, Vol. 17 Issue 1, p25-28. 4p.

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Akademický článek

Production and evolution of A-centers in n-type Si1-xGex.

Autor: Sgourou, E. N., Andrianakis, A., Londos, C. A., Chroneos, A.

Publikováno v: Journal of Applied Physics; Mar2013, Vol. 113 Issue 11, p113507, 5p, 6 Graphs

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Akademický článek

Isochronous annealing of n-Si samples irradiated with 25-MeV protons.

Autor: Pagava, T.¹ tpagava@gtu.ge, Beridze, M.¹, Maisuradze, N.¹

Publikováno v: Semiconductors. Oct2012, Vol. 46 Issue 10, p1251-1255. 5p.

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