Zobrazeno 1 - 10
of 75
pro vyhledávání: '"V. I. Vdovin"'
Publikováno v:
Crystallography Reports. 66:636-643
As a result of in situ irradiation in a high-resolution electron microscope, structure modelling, and calculation of images, it is shown that the incorporation of self-interstitial atoms into the extension region of the core of any dislocation is acc
Autor:
Nikolai A. Sobolev, L. I. Fedina, A. E. Kalyadin, K. F. Shtel’makh, Anton K. Gutakovskii, V. I. Vdovin, Elena I. Shek
Publikováno v:
Crystallography Reports. 66:625-635
The structure and luminescence properties of Czochralski-grown n-Si samples implanted with oxygen ions have been comprehensively analyzed using photoluminescence and transmission electron microscopy (TEM). A high oxygen concentration (5 × 1019 cm–
Autor:
E. A. Yakimchuk, V. I. Vdovin, Anton K. Gutakovskii, N. A. Nebogatikova, Irina V. Antonova, Artem I. Ivanov, R. A. Soots, I. A. Kotin, Kurkina
Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree, composite graphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5393e1fe38ddaae3aa84ec79474a397c
http://arxiv.org/abs/2205.07602
http://arxiv.org/abs/2205.07602
Publikováno v:
Physics of the Solid State. 61:1263-1271
The crystal structure features and light-emitting properties of 3C–SiC island films grown at decreased temperatures on the Si(100) surface by vacuum chemical epitaxy with the use of hydrogen-containing compounds are studied. The nucleation characte
Autor:
Konstantin S. Zhuravlev, Timur V. Malin, Kseniya A. Konfederatova, V. I. Vdovin, Yurij G. Galitsyn, I. A. Aleksandrov, Vladimir G. Mansurov
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 133:1181-1187
We report an original method of GaN/AlN quantum dots (QDs) formation with low density by ammonia MBE on the (0001)AlN surface using a decomposition process of GaN thin layer. The QDs formation has been investigated in situ by reflection high-energy e
Autor:
David Tetelbaum, E. I. Shek, K. F. Shtel`makh, Alexey Mikhaylov, L.I. Fedina, D. Li, Deren Yang, A. E. Kalyadin, N. A. Sobolev, Anton K. Gutakovskii, V. I. Vdovin
Publikováno v:
Materials Today: Proceedings. 5:14772-14777
Electroluminescence (EL) from light-emitting diodes (LEDs) at wavelengths in the range 1000-1650 nm, current densities of up to 10 A/cm2, and temperature of 64 K has been studied. p-Cz-Si wafers were irradiated with low-energy electrons (a variant of
Autor:
A. V. Dvurechenskii, V. D. Zhivulko, Anton K. Gutakovskii, V. I. Vdovin, Vladimir Zinovyev, L. I. Fedina, O. M. Borodavchenko, A. V. Mudryi, A. F. Zinovieva, Zh. V. Smagina
Publikováno v:
Journal of Applied Physics. 130:153101
The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge + ion bombardment is studied. The structure represents a Si substrate with GeSi nanoclusters created by 80 keV Ge implantation with a fluence of ∼1015 ions/cm 2 and subseque
Autor:
V. I. Vdovin, N. A. Nebogatikova, Pavel V. Fedotov, Elena D. Obraztsova, A. I. Komonov, Irina V. Antonova
Publikováno v:
Journal of Materials Science. 52:10993-11003
Structural and optical properties of films and particles prepared from partially fluorinated graphene suspensions were examined. Photoluminescence (PL) coming from partially fluorinated graphene suspensions (quantum dots with fluorinated edges) and f
Autor:
Irina I. Kurkina, N. A. Nebogatikova, V. I. Vdovin, Valeriy G. Kesler, V. Ya. Prinz, V. B. Timofeev, Evgeniy R. Zakirov, G. N. Aleksandrov, Irina V. Antonova, Svetlana A. Smagulova
Publikováno v:
Physical Chemistry Chemical Physics. 17:13257-13266
In the present study, we have examined the interaction between a suspension of graphene in dimethylformamide and an aqueous solution of hydrofluoric acid, which was found to result in partial fluorination of suspension flakes. A considerable decrease
Publikováno v:
physica status solidi c. 13:289-291