Zobrazeno 1 - 10
of 72
pro vyhledávání: '"V. I. Sidorov"'
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 57:202-207
The vibration activity of microcryogenic machine is an important factor determining the lifetime characteristics of matrix photodetector devices (PDD) operating in the IR range of the spectrum. The frequency responses of the vibration activity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5600d538ac77968e95175241a7672eee
https://doi.org/10.3103/s8756699021020060
https://doi.org/10.3103/s8756699021020060
Publikováno v:
Автометрия. 57:101-107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f8e3a8d65c3468151c2441e3afc745f
https://doi.org/10.15372/aut20210211
https://doi.org/10.15372/aut20210211
Autor:
V. P. Polyanskaya, D. V. Terin, Victor V. Galushka, Anton A. Mashkov, Olga Ya. Belobrovaya, Victoria S. Ismailova, V. I. Sidorov
Publikováno v:
Izvestiya of Saratov University. New series. Series: Physics. 20:288-298
Background and Objectives: Porous silicon nanowires (SiNP) obtained by the method of metal stimulated chemical etching (EE method) are of great interest. The physical properties of this material depend significantly on the morphology of the nanostruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa6c4ddb5796e0b5203fb5c1fe5daa8
https://doi.org/10.18500/1817-3020-2020-20-4-288-298
https://doi.org/10.18500/1817-3020-2020-20-4-288-298
Publikováno v:
Technical Physics Letters. 45:533-536
—The effect of low-dose γ radiation on the mechanisms of low-frequency conductivity of mesoporous silicon has been studied. It has been shown that γ irradiation preserves the hopping character of conductivity at a change of the frequency of phono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e0f49418afd21042bf7d690d81ffbc
https://doi.org/10.1134/s1063785019060063
https://doi.org/10.1134/s1063785019060063
Autor:
Olga Ya. Belobrovaya, Andrey L. Karagaychev, Anton A. Mantsurov, V. P. Polyanskaya, V. I. Sidorov, Elvira A. Zharkova, Victor V. Galushka, D. V. Terin
Publikováno v:
Izvestiya of Saratov University. New series. Series: Physics. 19:312-316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c345762135ccda267bad7133ebaf056
https://doi.org/10.18500/1817-3020-2019-19-4-312-316
https://doi.org/10.18500/1817-3020-2019-19-4-312-316
Autor:
D. V. Terin, V. P. Polyanskaya, V. I. Sidorov, Olga Yakovlaevn Belobrovaya, Victor V. Galushka, Anton A. Mashkov
Publikováno v:
2020 International Conference on Actual Problems of Electron Devices Engineering (APEDE).
The results of a study of the optical properties of porous silicon nanostructures obtained by metal-assisted chemical etching of γ-quanta irradiated with low doses during their formation are discussed. The total reflection from the obtained samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5487cb247285616611ae44da1b47cf3
https://doi.org/10.1109/apede48864.2020.9255620
https://doi.org/10.1109/apede48864.2020.9255620
Autor:
Daniil N. Bratashov, V. I. Sidorov, D. V. Terin, O. Yu. Kondrateva, Viktor V. Galushka, I. T. Yagudin, V. P. Polyanskaya, O. Ya. Belobrovaya
Publikováno v:
BioNanoScience. 8:818-822
Photoluminescent macroporous silicon is studied for tumor imaging application. Gamma-radiation is used for modification of morphology of pores and their size. It is shown by Raman and photoluminescence study that after the irradiation of gamma rays n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2b653e5538e13fa9067313b8bf69a3a
https://doi.org/10.1007/s12668-018-0544-1
https://doi.org/10.1007/s12668-018-0544-1
Autor:
V. P. Polyanskaya, O. Ya. Belobrovaya, I. T. Yagudin, I. V. Galushka, Viktor V. Galushka, D. V. Terin, V. I. Sidorov, D. I. Bilenko, E. A. Zharkova
Publikováno v:
Semiconductors. 52:331-334
The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd9943296e7ed43bdc8c71db86e4c0c
https://doi.org/10.1134/s1063782618030077
https://doi.org/10.1134/s1063782618030077
Publikováno v:
Geomagnetism and Aeronomy. 56:393-400
The analysis of observations of large solar flares made it possible to propose a hypothesis on existence of a skin-layer in magnetic flux ropes of coronal mass ejections. On the assumption that the Bohm coefficient determines the diffusion of magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2070057a8a570fc20c1792972bfa653
https://doi.org/10.1134/s0016793216040058
https://doi.org/10.1134/s0016793216040058
Publikováno v:
Technical Physics Letters. 43:987-989
The influence of low doses of γ rays on the capacitive properties of structures based on mesoporous silicon has been investigated. The concentration distribution of dangling charged bonds over the layer depth, which changes under irradiation, has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04bd317cd46fa8fb7a2058bd1b535f96
https://doi.org/10.1134/s1063785017110049
https://doi.org/10.1134/s1063785017110049