Zobrazeno 1 - 10
of 40
pro vyhledávání: '"V. I. Safarov"'
Publikováno v:
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2022, 40 (3), pp.033416. ⟨10.1116/6.0001821⟩
Journal of Vacuum Science & Technology A, 2022, 40 (3), pp.033416. ⟨10.1116/6.0001821⟩
We present a study of the modifications of the electronic properties of β-gallium oxide crystals by 2.5-MeV electron irradiation. This type of irradiation produces exclusively local point defects in Ga2O3, predominantly gallium vacancies, which act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dead036b625e2a93f94a8b6f3f587216
https://hal.science/hal-03799721/document
https://hal.science/hal-03799721/document
Publikováno v:
Journal of Applied Physics. 132:155703
Using high-frequency electron paramagnetic resonance (EPR), we have observed non-Kramers ions with giant fine structure splitting of the order of 100 GHz in n-type β-Ga2O3 crystals. These EPR spectra were assigned to Fe2+ ions 5 D (3 d 6) with S = 2
Autor:
Nabil Rochdi, V. I. Safarov
Publikováno v:
Journal of Physics: Conference Series. 1081:012002
Autor:
D. Tonneau, H. Dallaporta, Jacques Gautier, N. Clement, V. I. Safarov, D Mariole, Vincent Bouchiat, David Fraboulet
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:999-1002
We present electrical characterization of silicon nanowires made from ultrathin silicon-on-insulator (SOI) using a lithography process based on an atomic force microscope (AFM). SOI wafers were first thinned, prepatterned and doped using conventional
Autor:
Yves Levy, Bruno Darracq, J-M. Lehn, Frederic Chaput, V. I. Safarov, Khalid Lahlil, Gilles Parent, J.P. Boilot, Alvaro Fernandez-Acebes, John Biteau, Jacques Peretti
Publikováno v:
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals. 344:77-82
This work is devoted to photoresponsive hybrid organic-inorganic materials prepared by the sol-gel method, using dithienylethene or azobenzene as photosensitive chromophores. These photochromic units were covalently attached to the silica backbone as
Autor:
D. Tonneau, Vincent Bouchiat, R. Even, H. Dallaporta, V. I. Safarov, R. Pierrisnard, F. Marchi, P. Doppelt
Publikováno v:
Microelectronic Engineering. 50:59-65
Single electron devices are of great interest for their possible replacement of transistors in memories. The key to the preparation of these components is the production of low capacitance dots, which requires a lithography step at nanometric scale.
Autor:
F. Marchi, D. Tonneau, P. Doppelt, Vincent Bouchiat, R. Even, V. I. Safarov, H. Dallaporta, R. Pierrisnard
Publikováno v:
Le Journal de Physique IV. :Pr8-733
Direct patterning of nanometric metallic features is possible by local decomposition of gaseous molecules on a surface, induced by application of a pulse voltage on a STM tip while surface imaging. Decomposition reaction occurs above a threshold volt
Autor:
V. I. Safarov, A.N. Korotkov
Publikováno v:
Superlattices and Microstructures. 25:259-262
We consider the single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island. Tunneling current causes nonequilibrium electron–spin distribution in the island. The dependencies of the magnetoresistance ratio on the bias and
Autor:
V. I. Safarov
Publikováno v:
Il Nuovo Cimento D. 20:1047-1054
An historical review of the development of optical spectroscopy of surface states in semiconductors is presented. The importance of symmetry considerations and of polarization properties is emphasized.
Autor:
A. Filipe, Georges Lampel, Henri-Jean Drouhin, Jacques Peretti, J. Nagle, V. I. Safarov, A. Schuhl, Y. Lassailly
Publikováno v:
Physical Review Letters. 80:2425-2428
A quasimonoenergetic spin-polarized electron beam, emitted in vacuum from a GaAs photocathode, is injected into a thin ferromagnetic metal layer deposited on an $n$-doped GaAs substrate. The current transmitted through this Schottky barrier is measur