Zobrazeno 1 - 10
of 12
pro vyhledávání: '"V. I. Ratushnyi"'
Publikováno v:
Technical Physics. 65:799-804
The electrical performance of thermophotovoltaic converters with a flip-chip design based on p-InAsSbP/n-InAs/n-InAsSbP double heterostructures with the substrate completely or partially removed is examined. The influence of resistance of different p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de86992026a6c6b5a4288ecd7f4747c8
https://doi.org/10.1134/s1063784220050187
https://doi.org/10.1134/s1063784220050187
Publikováno v:
Technical Physics. 64:1164-1167
The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7f5589b28a6fa2b942d2643109ba5e5
https://doi.org/10.1134/s1063784219080140
https://doi.org/10.1134/s1063784219080140
Autor:
N. M. Stus, M. A. Remennyi, S. A. Karandashev, V. I. Ratushnyi, A. Yu. Rybal’chenko, B. A. Matveev
Publikováno v:
Technical Physics. 59:1631-1635
The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial variation of the lateral resistance of a semiconductor layer on the irradiated side. The applicab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43cc71916f6764646b2015edbb2530f4
https://doi.org/10.1134/s1063784214110115
https://doi.org/10.1134/s1063784214110115
Autor:
A. L. Zakgeim, B. A. Matveev, N. M. Stus, A. Yu. Rybal’chenko, M. A. Remennyy, N. D. Il’inskaya, V. I. Ratushnyi, S. A. Karandashev, Anton E. Chernyakov
Publikováno v:
Semiconductors. 46:690-695
The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of posi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763ee936d028c546bb6e770b21ba1af2
https://doi.org/10.1134/s1063782612050119
https://doi.org/10.1134/s1063782612050119
Publikováno v:
Technical Physics Letters. 40:1018-1020
The structure of zinc oxide (ZnO) films deposited on silicon substrates using dc glow discharge in oxygen have been studied for two electrode configurations—with tubular (hollow) and planar cathodes. At a substrate temperature of 670 K and oxygen p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cefa45d211497ea93a5427fac2b2f45c
https://doi.org/10.1134/s1063785014110315
https://doi.org/10.1134/s1063785014110315
Autor:
R V Levin, B V Pushnyi, I. V. Fedorov, G G Zegrya, A. A. Usikova, N. L. Bazhenov, V I Ratushnyi
Publikováno v:
Journal of Physics: Conference Series. 1135:012031
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44c1b2251e867b577253a5818b29c655
https://doi.org/10.1088/1742-6596/1135/1/012031
https://doi.org/10.1088/1742-6596/1135/1/012031
Autor:
O. Yu. Kudryashov, V. I. Ratushnyi, Alexander Y. Polyakov, A. I. Belogorokhov, M. P. Duhnovsky, Stephen J. Pearton, V. F. Pavlov, T. G. Yugova, S. S. Malakhov, A. K. Ratnikova, Yu. P. Kozlova, A. V. Govorkov, N. B. Smirnov, I. A. Belogorokhov, A. A. Donskov, M. V. Mezhennyi, Yu. Yu. Fyodorov, A. V. Markov, I. A. Leontyev
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:1011-1015
Growth of GaN on polycrystalline chemical vapor deposition (CVD) diamond prepared on Si was achieved by hydride vapor phase epitaxy (HVPE). If the polycrystalline CVD diamond is separated from the Si substrate and the side turned to Si is covered by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c592424a7f418b6ac1444e5eea2466c
https://doi.org/10.1116/1.3488616
https://doi.org/10.1116/1.3488616
Autor:
A. V. Koryuk, A. A. Shlenskii, V. I. Ratushnyi, S. A. Karandashev, M. A. Remennyi, L. S. Lunin, B. A. Matveev, N. G. Tarakanova
Publikováno v:
Semiconductors. 41:1369-1374
Development of immersion-lens photodiodes based on GaInAsSb alloyss with long-wavelength photosensitivity cutoffs at 2.05 and 2.25 μm (20°C) is reported. Spectral and current-voltage characteristics and the effect of the design of a photodiode on i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c8073e38b7f77d14bbaedcb29f2ed6
https://doi.org/10.1134/s1063782607110188
https://doi.org/10.1134/s1063782607110188
Publikováno v:
Inorganic Materials. 40:327-330
The effect of the crystallographic orientation of GaAs substrates on the composition of GaxIn1 – xP solid solutions grown by liquid-phase heteroepitaxy is studied. It is shown that GaAs-lattice-matched GaxIn1 – xP solid solutions can be grown, un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54770071ca3c9b572edb9c865fdeb925
https://doi.org/10.1023/b:inma.0000023948.90214.a7
https://doi.org/10.1023/b:inma.0000023948.90214.a7
Publikováno v:
Crystallography Reports. 49:193-196
The contribution of the elastic component of the excess energy of mixing is determined for A3B5 quinary solid solutions. A relationship is derived for the activities of the components in an elastically strained solid phase of the quinary solid soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656853162a2235b988977a6294826302
https://doi.org/10.1134/1.1690414
https://doi.org/10.1134/1.1690414