Zobrazeno 1 - 9
of 9
pro vyhledávání: '"V. I. Plebanovich"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 10-16 (2019)
For crystals of EEPROM integrated circuits (ICs) a method for predicting of information storage time after the power is turned off is provided. Prediction is performed using the accelerated tests, which are considered as the temperature effects that
Externí odkaz:
https://doaj.org/article/c2e21c477ab94f7d9ba21aa2b9c54092
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 45-52 (2019)
With the help of accelerated tests we have obtained experimental data about the degradation of the functional parameters of three types of high-power transistors as the representatives of electronic products. Histograms of parameters’ distribution
Externí odkaz:
https://doaj.org/article/1b37323da2c34db790aed0fc518be0d6
Autor:
M. I. Tarasik, P. K. Sadovskii, V. I. Plebanovich, A. N. Petlitskii, Vladimir Odzhaev, A. R. Chelyadinskii
Publikováno v:
Physics of the Solid State. 60:20-22
The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4b2fdcdd009a31cc6d27d9f0b8e5cf4
https://doi.org/10.1134/s1063783418010158
https://doi.org/10.1134/s1063783418010158
Publikováno v:
Physics of the Solid State. 50:1433-1437
Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a threshold dose and annihilation of point defects on substitutional impurities. Implantation conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06ccb1a5e848ad5f60428b52890f1f7
https://doi.org/10.1134/s1063783408080088
https://doi.org/10.1134/s1063783408080088
Publikováno v:
Russian Microelectronics. 37:187-191
This paper reports on an experimental evaluation of an improved multistep method for ion implantation in the case of boron-doped silicon. The new method is compared with the standard one in terms of the electrical performance of test devices (vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01f0bfee8e268ac3c55e1e702e0bd953
https://doi.org/10.1134/s1063739708030062
https://doi.org/10.1134/s1063739708030062
Publikováno v:
Russian Microelectronics. 35:235-242
The results are presented of an experimental evaluation of electromigration resistance for two types of Al metallization pattern used in the ICs of the 1554TBM and 1594T series. The experimental procedure is based on electrical-resistance measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0c8e8fc6f3dde76ba9568b06fe3b4c8
https://doi.org/10.1134/s1063739706040056
https://doi.org/10.1134/s1063739706040056
Publikováno v:
Russian Microelectronics. 32:145-150
The formation mechanism, composition, and properties of an oxide film that grows on an Si3N4 mask during the LOCOS process are studied experimentally. The effect of the HF etching of the mask oxide film on the profile of the bird's beak is investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff0edb04b105349f0b6ac7bece669816
https://doi.org/10.1023/a:1023909703326
https://doi.org/10.1023/a:1023909703326
Publikováno v:
Russian Microelectronics; May2003, Vol. 32 Issue 3, p145-150, 6p
Publikováno v:
2006 16th International Crimean Microwave & Telecommunication Technology; 2006, p591-593, 3p