Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. I. Pavlichenko"'
Publikováno v:
Zaporožskij Medicinskij Žurnal, Iss 1, Pp 53-57 (2013)
Many species of synantropic Collembola living in close association with man. Some species for example Wolowsia buski can invade the hair of the head. Some patient think that Collembola cause dermatitis, but doctors diagnose the «delusional parasitos
Externí odkaz:
https://doaj.org/article/d442c3359d0e40f58c7a87165e081abf
Autor:
V I, Pavlichenko
Publikováno v:
Parazitologiia. 20(6)
A new subspecies of simuliids, Chelocnetha angustitarsis zaporojae Pavlichenko ssp. n., from the steppe zone of the Ukraine is described. The subspecies is characterized by a peculiar structure of genital appendages of imago and a smaller number of r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::37163f67502b006e6c2cbdcdb30054cf
https://pubmed.ncbi.nlm.nih.gov/3822508
https://pubmed.ncbi.nlm.nih.gov/3822508
Autor:
V I, Pavlichenko, V N, Pavlichenko
Publikováno v:
Mikrobiolohichnyi zhurnal. 39(2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f86eb8832c899dc52c01b7278de9de65
https://pubmed.ncbi.nlm.nih.gov/865331
https://pubmed.ncbi.nlm.nih.gov/865331
Autor:
V I, Pavlichenko, A S, Leĭbenzon
Publikováno v:
TSitologiia i genetika. 8(6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::728e0e99b12c945a50f42e5b30810ad2
https://pubmed.ncbi.nlm.nih.gov/4469846
https://pubmed.ncbi.nlm.nih.gov/4469846
Publikováno v:
Physics of p-n Junctions and Semiconductor Devices ISBN: 9781475712346
A description is given of the methods of fabrication of silicon carbide rectifiers with breakdown voltages of 100 – 600 V. The methods involve diffusion or alloying at relatively low temperatures, applied for long periods in order to reduce the imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::becbb10160aa4c5e7e9336d1fbc8ccb1
https://doi.org/10.1007/978-1-4757-1232-2_25
https://doi.org/10.1007/978-1-4757-1232-2_25
Autor:
V. I. Pavlichenko, I. V. Ryzhikov
Publikováno v:
Physics of p-n Junctions and Semiconductor Devices ISBN: 9781475712346
An investigation was made of the current-voltage, luminescence intensity-voltage, capacitance-frequency, luminescence intensity-current, and relaxation characteristics of p-n junctions in silicon carbide. These junctions were prepared by the diffusio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69197d39afc1447574e01e2c62e7155e
https://doi.org/10.1007/978-1-4757-1232-2_68
https://doi.org/10.1007/978-1-4757-1232-2_68