Zobrazeno 1 - 10
of 28
pro vyhledávání: '"V. I. Osinskii"'
Autor:
V. I. Osinskii, N. M. Liahova, A. V. Osinskii, Marat Serhiiovych Onachenko, Andrii Volodymyrovych Diagilev, I. V. Masol
Publikováno v:
Electronics and Communications. 21:10-21
Рассмотрены структурные и технологические аспекты поляризации многокомпонентных твердых растворов соединений А 3 В 5 , в частности, три
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5cd9404c296b035221cce11db25a30f
https://doi.org/10.20535/2312-1807.2016.21.6.79190
https://doi.org/10.20535/2312-1807.2016.21.6.79190
Autor:
N. О. Suhoviy, E. V. Semenovskaya, N. М. Lyahova, V. I. Osinskii, E. M. Faleeva, V. I. Timofeyev
Publikováno v:
Electronics and Communications. 19:32-36
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91101366ad31a15697709ce48ec68575
https://doi.org/10.20535/2312-1807.2014.19.5.38788
https://doi.org/10.20535/2312-1807.2014.19.5.38788
Publikováno v:
physica status solidi (a). 121:227-233
The spectral dependence of the coefficient of photoelectric crosstalk between photosensitive elements in silicon diffused photodiode and phototransistor linear arrays is studied. The physical mechanisms causing the crosstalk are analyzed for differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d080846aca64db6c8ba60d8fd37d2ee
https://doi.org/10.1002/pssa.2211210127
https://doi.org/10.1002/pssa.2211210127
Publikováno v:
Journal of Applied Spectroscopy. 52:93-96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b44ecdbe8c82ef1e358abcf3760592ae
https://doi.org/10.1007/bf00664790
https://doi.org/10.1007/bf00664790
Publikováno v:
Journal of Structural Chemistry. 33:596-598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64189319aa7e4ef5d6bc199cba250b30
https://doi.org/10.1007/bf00746940
https://doi.org/10.1007/bf00746940
Autor:
V. I. Osinskii
Publikováno v:
Journal of Applied Spectroscopy. 21:1492-1497
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0e7661b1ce9492dd1b7ad36c57913d
https://doi.org/10.1007/bf00604428
https://doi.org/10.1007/bf00604428
Publikováno v:
Journal of Applied Spectroscopy. 22:324-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e5122b9599b5a5111016a0a7dfb1f9
https://doi.org/10.1007/bf00610077
https://doi.org/10.1007/bf00610077
Autor:
V. I. Osinskii, A. Ya. Peshko
Publikováno v:
Physica Status Solidi (a). 54:577-584
The results of investigations on the anomalous temperature dependence of recombination radiation of GaAs structures produced by epitaxy from gaseous and liquid phase and by laser doping are presented. On the basis of the experimental measurements and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e005c6505c79477d07b38b65bef0a3
https://doi.org/10.1002/pssa.2210540219
https://doi.org/10.1002/pssa.2210540219
Autor:
V. I. Osinskii, V. I. Sergeev
Publikováno v:
Journal of Applied Spectroscopy. 40:328-331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7238b8836329e2293a5c018d5b73ca9e
https://doi.org/10.1007/bf00661524
https://doi.org/10.1007/bf00661524
Minority Carrier Transport and Radiative Recombination in AlxGa1−xAs Variable-Composition Structures
Publikováno v:
physica status solidi (a). 74:43-50
Some features of minority carrier transport and radiative recombination in semiconductor AlxGa1−xAs structures with varying band-gap are given. The behaviour of the distribution of the basic electrical and physical parameters in the bulk of a semic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac0f7e5a23674fe0dc7ebdf11a44bae
https://doi.org/10.1002/pssa.2210740103
https://doi.org/10.1002/pssa.2210740103