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pro vyhledávání: '"V. I. Novoselets"'
Autor:
K. S. Zhuravlev, S. V. Shcherbakov, A. A. Borisov, A. A. Makovetskaya, N. D. Ursulyak, A. I. Toropov, S. S. Zyrin, V. I. Novoselets, V. M. Lukashin, A. B. Pashkovskii, V. G. Lapin
Publikováno v:
Technical Physics Letters. 42:848-851
Small-signal characteristics of pseudomorphic high-electron-mobility transistors based on donor–acceptor doped heterostructures (DA-pHEMTs) are compared to those of analogous transistors (pHEMTs) based on traditional heterostructures without accept