Zobrazeno 1 - 1
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pro vyhledávání: '"V. I. Krymski"'
Autor:
P. A. Kholov, N. V. Gaponenko, K. V. Shaidakova, V. I. Krymski, V. A. Filipenya, T. V. Petlitskaya, V. V. Kolos, A N. Pyatlitski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 1, Pp 74-80 (2020)
The objective of the work is investigation the dielectric permittivity and dielectric loss tangent of BaTiO3 films in a capacitor structure formed by sol – gel method on a Si/TiOx/Pt substrate. The basis of this capacitor is a four-layer film of ba
Externí odkaz:
https://doaj.org/article/96b1f395a79e44028a37d912887eb71d
