Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V. I. Kopchatov"'
Autor:
N. Yu. Gordeev, G. Reuscher, T. V. Shubina, Sergei Ivanov, V. I. Kopchatov, G. Landwehr, P. S. Kop’ev, Andreas Waag, N. D. Il’inskaya, Innokenty I. Novikov
Publikováno v:
Semiconductors. 35:1340-1344
Degradation characteristics of p-i-n BeZnSe/Zn(Be)CdSe light-emitting diodes were investigated. Undoped short-period superlattices, which provide efficient hole transport from the p +-BeTe:N near-contact region (hole injector) into the active region,
Autor:
Innokenty I. Novikov, V. I. Kopchatov, N. Yu. Gordeev, Sergei V. Zaitsev, P. S. Kop’ev, L. Ya. Karachinsky, L. A. Graham, D. L. Huffaker
Publikováno v:
Semiconductors. 33:1309-1314
The dependences of the characteristic superradiance time in quantum well InGaAs/GaAs laser heterostructures on the pump current, temperature, and cross sections of the active region are studied by analyzing electroluminescence spectra. The number of
Autor:
Y.M. Shernyakov, N. Yu. Gordeev, P. S. Kop’ev, A. Yu. Egorov, Zh. I. Alferov, Sergey V. Zaitsev, A. E. Zhukov, Dieter Bimberg, Mikhail V. Maximov, V. I. Kopchatov, A. F. Tsatsul’nikov, V. M. Ustinov, Nikolay N. Ledentsov, A. R. Kovsh
Publikováno v:
Journal of Electronic Materials. 27:106-109
Arrays of vertically coupled InGaAs quantum dots (QDs) in an AlGaAs matrix have been used in injection lasers. Increase in the band gap of a matrix material by replacement of a GaAs matrix with an AlGaAs one led to dramatic increase in quantum dot lo
Autor:
V. I. Kopchatov, L. Ya. Karachinsky, V. M. Ustinov, Innokenty I. Novikov, Sergey V. Zaitsev, P. S. Kop’ev, N. Yu. Gordeev
Publikováno v:
Semiconductors. 37:112-114
Electroluminescence spectroscopy has been used in a wide range of temperatures (77–300 K) and driving current densities to study a laser heterostructure based on vertically coupled self-assembled InGaAs quantum dots (QD). It has been found that las
Autor:
P. S. Kop’ev, I. S. Tarasov, V. I. Kopchatov, Nikita A. Pikhtin, I. I. Novikov, V. M. Ustinov, L. Ya. Karachinsky, Sergey V. Zaitsev, N. Yu. Gordeev
Publikováno v:
Applied Physics Letters. 76:2514-2516
The superradiance model was recently successfully applied to describe semiconductor quantum well luminescence spectra at low temperature (77 K). In the present work, we expand and develop this approach for room-temperature spectra and compare results
Autor:
P. S. Kop’ev, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinskii, Sergey V. Zaitsev, V. M. Ustinov, Innokenty I. Novikov
Publikováno v:
Technical Physics Letters. 26:259-261
Based on the simplest expressions of the theory of superradiation for a two-level system, a model is suggested to describe inhomogeneously broadened spectra of radiation from heterostructures with quantum dot. A 98% agreement between predicted and ex
Autor:
V. M. Ustinov, Nikolai N. Ledentsov, Yu. M. Shernyakov, Mikhail V. Maximov, A. Yu. Egorov, A. F. Tsatsul’nikov, Zh. I. Alferov, P. S. Kop’ev, A. V. Lunev, A. E. Zhukov, Dieter Bimberg, A. R. Kovsh, V. I. Kopchatov
Publikováno v:
Scopus-Elsevier
The current dependence of the optical gain in lasers based on self-organized InGaAs quantum dots in a AlGaAs/GaAs matrix is investigated experimentally. A transition from lasing via the ground state of quantum dots to lasing via an excited state is o
Autor:
Innokenty I. Novikov, A. M. Georgievskii, N. Yu. Gordeev, Sergey V. Zaitsev, V. I. Kopchatov, P. S. Kop’ev, L. Ya. Karachinskii
Publikováno v:
Semiconductors. 33:779-781
An analytic expression for the shape function for homogeneous broadening of the emission spectra of semiconductor heterostructure lasers is obtained on the basis of simple expressions from the theory of the superradiance of two-level systems. Good ag
Autor:
A. R. Kovsh, V. I. Kopchatov, A. V. Lunev, P. S. Kop’ev, A. E. Zhukov, V. M. Ustinov, Sergey V. Zaitsev, B. V. Volovik, N. Yu. Gordeev, A. Yu. Egorov, A. F. Tsatsul’nikov, Nikolai N. Ledentsov
Publikováno v:
Semiconductors. 32:795-797
InAs quantum dots in a InGaAs matrix grown on an InP substrate by molecular-beam epitaxy are employed as the active region of an injection laser. Lasing via quantum-dot states is observed in the temperature range 77–200 K. At the lowest threshold c
Autor:
A. E. Zhukov, A.Y. Egorov, P. S. Kop’ev, V. I. Kopchatov, V. M. Ustinov, A. R. Kovsh, N. Y. Gordeev, S. V. Zaitsev
Publikováno v:
CLEO/Europe Conference on Lasers and Electro-Optics.