Zobrazeno 1 - 10
of 91
pro vyhledávání: '"V. I. Gaman"'
Autor:
A. V. Almaev, V. I. Gaman
Publikováno v:
Russian Physics Journal. 61:1153-1159
The dependence of the characteristics of hydrogen sensors based on thin Pt/Pd/SnO2:Sb, Ag, Y and Ag/SnO2:Sb, Ag, Y films obtained by the method of magnetron sputtering at a direct current on the humidity level of the gas mixture during operation in t
Autor:
V. I. Gaman, A. V. Almaev
Publikováno v:
Russian physics journal. 2017. Vol. 60, № 7. P. 1081-1087
Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold (Au/SnO2:Sb, Au) is studied in the thermo-cyclic mode at temperatures from 623 to 773 K and abso
Autor:
A. V. Almaev, V. I. Gaman
Publikováno v:
Russian physics journal. 2017. Vol. 60, № 1. P. 90-100
An expression is obtained for the energy band bending eφsH on the surface of the SnO2 film in the clean air + hydrogen mixture. It is assumed that the value of eφsH depends not only on the surface charge density of adsorbed oxygen ions O¯, but als
Publikováno v:
Russian Physics Journal. 57:334-340
The results of studies of time dependence of conductivity of carbon monooxide sensors based on thin polycrystalline films of tin dioxide in a thermo-cyclic operation mode are presented. Expressions describing the dependences of the sensor response an
Publikováno v:
Russian Physics Journal. 56:1427-1434
The results of studies of the time dependence of conductivity of hydrogen sensors, based on thin polycrystalline films of tin dioxide, in the thermo-cyclic operation mode, are presented. A method for determining the energy band bending at the interfa
Autor:
V. I. Gaman
Publikováno v:
Russian Physics Journal. 54:1364-1371
Physical principles of operation of oxygen and nitrogen dioxide sensors based on thin polycrystalline metal oxide semiconductor films are considered. Analytical expressions describing dependences of the sensor conductivity and the sensor response to
Autor:
V. I. Gaman
Publikováno v:
Russian Physics Journal. 54:1137-1144
Analytical expressions describing dependences of the surface density of adsorbed oxygen ions and energy band bending in the subsurface region of a metal oxide semiconductor on the oxygen concentration that consider not only the process of neutral gas
Autor:
F. V. Rudov, O. V. Anisimov, E. Yu. Sevast’yanov, N. K. Maksimova, E. V. Chernikov, Yu. P. Najden, V. I. Gaman, V. A. Novikov
Publikováno v:
Semiconductors. 44:366-372
The microstructure and properties of gold-doped WO3 (WO3:Au) thin films before and after deposition of dispersed Au layers have been studied. It is shown that the γ-WO2.72 phase arises in WO3:Au layers, which leads to a significant increase in the f
Autor:
V. I. Gaman, N. K. Maksimova, E. V. Chernikov, N. V. Sergeichenko, O. V. Anisimov, E. Yu. Sevast’yanov
Publikováno v:
Russian Physics Journal. 51:831-839
The results of theoretical and experimental studies into the effect of water vapor on the electrical conductance of a gas sensor and the sensor response to hydrogen action are discussed. A relation describing the dependence of electrical conductance
Autor:
V. I. Gaman
Publikováno v:
Russian Physics Journal. 51:425-441
The most probable physical models of hydrogen sensors based on thin stannic oxide films, MOS-structures, and tunnel MOS-diodes are discussed. The emphasis is on the mechanisms of formation of sensor response to hydrogen. The analytical equations desc