Výsledky vyhledávání - "V. I. Egorkin"

Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate

Autor: V. V. Kapaev, O. B. Kukhtyaeva, V. I. Egorkin, V. E. Zemlyakov

Publikováno v: Russian Microelectronics. 49:445-451

We perform the numerical simulation of the characteristics of normally-off GaN/AlGaN HEMT transistors with a p-gate. The dependences of the threshold voltage on the thickness of the main AlGaN barrier and additional spacer and stop AlN layers are det

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5fdd69158779bab4abe6c95f2c6253ca
https://doi.org/10.1134/s1063739720060049

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Normally-off p-Gate Transistor Based on AlGaN/GaN Heterostructure

Autor: V.A. Bespalov, A. A. Zaitsev, O. B. Kukhtyaeva, V.V. Kapaev, V. E. Zemlyakov, V. I. Egorkin

Publikováno v: Proceedings of Universities. Electronics. 25:391-401

The GaN based devices with respect to most parameters exceed the devices based on traditional semiconductor materials. The AlGaN-transistors are the devices, operating in the depletion mode. For most applications it is necessary to implement the oper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dba5f05f8a72bfee01f46c6efb37a804
https://doi.org/10.24151/1561-5405-2020-25-5-391-401

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Investigation of the Effect of Atomic Composition on the Plasma-Chemical Etching Rate of Silicon Nitride in High-Power Transistors Based on an AlGaN/GaN Heterojunction

Autor: V. I. Egorkin, Anatoly Kovalchuk, V. I. Garmash, V. E. Zemlyakov, Sergei Shapoval

Publikováno v: Semiconductors. 54:895-899

The effect of atomic composition on the rate of the plasma-chemical etching of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction is studied. It is shown how the subsequent process of its plasma-chemical etching depends on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::29f6fea7a17ba1794352c96cb0f04124
https://doi.org/10.1134/s1063782620080096

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Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC

Autor: V A Gudkov, V. E. Zemlyakov, A. V. Nezhentsev, V. I. Egorkin, V. I. Garmash

Publikováno v: Semiconductors. 53:2012-2015

For silicon carbide, the problem of obtaining low-resistance ohmic contacts with improved service characteristics remains topical despite a significant body of experimental data. The influence exerted by the composition of Ni and TiAl metallization,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a397bfaac3aa009563778dc815bbc7f5
https://doi.org/10.1134/s1063782619150053

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Effect of 4H-SiC Target Temperature under Ion Irradiation on the Distribution Profile of Al+ Ions

Autor: Andrey A. Shemukhin, Yu. S. Fedotov, A. V. Kozhemiako, A. V. Danilov, V. S. Chernysh, B. Merzuk, A. P. Evseev, V. I. Egorkin

Publikováno v: Moscow University Physics Bulletin. 74:620-624

4H-SiC was irradiated with Al+ions at an energy of 190 keV. The depth profiles of implanted aluminum were obtained using the secondary ion mass spectrometry method; a comparison was made with profiles calculated in the SRIM program. Using Rutherford

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ee0dcb905f0aa7d4b10bcd6733bf5dc
https://doi.org/10.3103/s0027134919060249

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Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

Autor: K. S. Zhuravlev, Vladimir G. Mansurov, D. Yu. Kazantsev, I. A. Aleksandrov, D. Yu. Protasov, A. A. Zaitsev, Timur V. Malin, A. S. Kozhukhov, D. S. Milakhin, B. Ya. Ber, V. E. Zemlyakov, V. I. Egorkin

Publikováno v: Technical Physics Letters. 45:761-764

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bed7b9dd9ef39c285250204ff955909c
https://doi.org/10.1134/s1063785019080108

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Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Autor: V. I. Egorkin, Sergey N. Vainshtein, Andrey V. Maslevtsov, Alexey Filimonov, V. E. Zemlyakov

Publikováno v: IEEE Transactions on Power Electronics. 34:3689-3699

The state-of-the-art long-distance near-infrared optical radars use laser-diode-based miniature pulsed transmitters producing optical pulses of 3–10 ns in duration and peak power typically below 40 W. The duration of the transmitted optical pulses

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d2d77bf5ed567f49569e2e436a6dae3
https://doi.org/10.1109/tpel.2018.2853563

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Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures

Autor: V. I. Egorkin, A. V. Nezhentsev, V. I. Garmash, V. E. Zemlyakov

Publikováno v: Semiconductors. 52:1969-1972

The preparation of ohmic contacts to heterobipolar nanostructures has a number of characteristic features. In addition to the basic requirement of minimizing contact resistance, contacts to this type of structures have a transition layer whose depth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77d7f2f7df65f67ef6d9a8228e85416a
https://doi.org/10.1134/s1063782618150046

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