Zobrazeno 1 - 10
of 24
pro vyhledávání: '"V. I. Balyuba"'
Publikováno v:
Semiconductors. 42:334-338
Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO2-n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4af52d1ecd229e3b5649b7baf4ea869a
https://doi.org/10.1134/s1063782608030172
https://doi.org/10.1134/s1063782608030172
Autor:
V. Yu. Gritsyk, A. V. Panin, S. S. Nazarov, V. I. Balyuba, L. S. Khludkova, V. M. Kalygina, T. A. Davydova
Publikováno v:
Semiconductors. 40:1436-1441
We study the effect of thermal annealing in the range of 200–610°C on the sensitivity and time dependences of the response of the Pd-SiO2-n-Si diodes to hydrogen and ammonia. The postannealing surface of a Pd electrode was examined using atomic fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c56abce73a0cfd4caac250f89d3fa4b
https://doi.org/10.1134/s1063782606120128
https://doi.org/10.1134/s1063782606120128
Publikováno v:
Russian Physics Journal. 44:1133-1138
Results of an experimental investigation into the influence of short-term (10 min) thermal annealing of MOS tunnel diodes on their electrical properties and capacitance, admittance, and flat-band voltage responses to the action of hydrogen are presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995031ce95acd548581beee86d4cd375
https://doi.org/10.1023/a:1015355121352
https://doi.org/10.1023/a:1015355121352
Publikováno v:
Semiconductors. 36:1136-1137
The influence exerted by the thermal annealing of silicon, prior to the deposition of a palladium contact, on the hydrogen sensitivity of palladium-〈natural oxide〉-silicon structures was studied. It is shown that structures based on annealed sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27315e6333a8e2f9c360d3a587e566a
https://doi.org/10.1134/1.1513858
https://doi.org/10.1134/1.1513858
Autor:
V. I. Balyuba
Publikováno v:
Semiconductors. 39:269
The influence of ammonia on the electrical characteristics of Pd-n-Si diode structures is studied. The kinetics of diode characteristics under exposure to ammonia is considered. It is shown that the response speed of ammonia sensors based on Pd-n-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409ef8bc5bae560bff9a30fd54e029b4
https://doi.org/10.1134/1.1864212
https://doi.org/10.1134/1.1864212
Publikováno v:
Soviet Physics Journal. 22:198-200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9443dc8f4a3b2c962ea340d32fa37b
https://doi.org/10.1007/bf00892019
https://doi.org/10.1007/bf00892019
Publikováno v:
Soviet Physics Journal. 20:679-681
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7792e6a473bf3d52709beb4998d307c
https://doi.org/10.1007/bf00893599
https://doi.org/10.1007/bf00893599
Autor:
Kalygina, V. M.1 kalygina@ngs.ru, Gricyk, V. Ju.1
Publikováno v:
Semiconductors. Jun2009, Vol. 43 Issue 6, p751-755. 5p. 7 Graphs.
Autor:
Shutaev, V. A.1 (AUTHOR) vadimshutaev@mail.ru, Grebenshchikova, E. A.1 (AUTHOR), Sidorov, V. G.2 (AUTHOR), Kompan, M. E.1 (AUTHOR), Yakovlev, Yu. P.1 (AUTHOR)
Publikováno v:
Semiconductors. Jun2020, Vol. 54 Issue 6, p658-661. 4p.
Autor:
Gaman, V. I.1 gaman@elefot.tsu.ru
Publikováno v:
Russian Physics Journal. Apr2008, Vol. 51 Issue 4, p425-441. 17p. 1 Diagram, 4 Graphs.