Zobrazeno 1 - 10
of 251
pro vyhledávání: '"V. Hortelano"'
Publikováno v:
Journal of Applied Physics. 125:145301
A recent experiment [Hortelano et al., Semicond. Sci. Technol. 32, 125005 (2017)] reported a rectification effect that appeared in curved narrow ballistic channels of a two-dimensional electron gas when the strength of a magnetic field applied to the
Autor:
A. Carmelo Prieto, Bruno Valentim, Alexandra Guedes, V. Hortelano, Manuel Algarra, Fernando Noronha, Rafael Algarra, Selma Neto
Publikováno v:
Spectroscopy Letters. 46:569-576
To evaluate the effectiveness of Raman microspectroscopy in euro banknotes’ recognition, several genuine and fake 10 and 20 euro banknotes were analyzed. Raman microspectroscopy revealed itself to be very useful in the detection of differences in t
Autor:
V. Hortelano, Juan Fernando Masa Jiménez, J. Périnet, Jorge Souto, François J. Laruelle, Julian Anaya
Publikováno v:
Microelectronics Reliability. 53:1501-1505
Degradation of high power laser diodes is related to defect formation in the active parts of the laser. Extended defects can develop both at the facets, and inside the cavity. Their characterization is necessary for understanding the mechanisms drivi
Autor:
D.N. Montenegro, Vincent Sallet, M.C. Martínez-Tomás, Juan Jiménez, V. Muñoz, Omar S. Martinez, V. Hortelano
Publikováno v:
MRS Proceedings. 1538:317-322
Nowadays, the nature of the non radiative recombination centres in ZnO is a matter of controversy; they have been related to extended defects, zinc vacancy complexes, and surface defects, among other possible candidates. We present herein the optical
Autor:
José Luis Plaza, Omar S. Martinez, H. Bensalah, Q. Zheng, V. Hortelano, Ernesto Diéguez, V. Carcelén, J. Crocco
Publikováno v:
Journal of Alloys and Compounds. 543:233-238
The objective of this work is to analyze the effects of argon ion irradiation process on the structure and distribution of Te inclusions in Cd 1-x Zn x Te crystals. The samples were treated with different ion fluences ranging from 2 to 8 × 10 17 cm
Autor:
V. Hortelano, Nicolas Michel, Michel Krakowski, Martin Hempel, Jens W. Tomm, J. Jim, Thomas Elsaesser
Publikováno v:
Laser & Photonics Reviews. 6:L15-L19
The propagation of defect networks in failed 980 nm emitting high-power diode lasers is analyzed. This is accomplished ex post facto by electron-beam based techniques applied without device preparation and in situ by thermographic microscopy with 1
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
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Producción Científica
Multicristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the m
Multicristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f93a4d65c340309ebf8a06b2bd90892c
https://doi.org/10.1016/j.spmi.2016.02.005
https://doi.org/10.1016/j.spmi.2016.02.005
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db5789283c93826abed05a24e15fafa8
Publikováno v:
physica status solidi c. 9:2158-2163
Mono-cast Si growth is currently a very promising approach to optimize the cost per watt in the production of PV devices, simultaneously increasing the installed energy/m2 ratio. However, due to the novelty of this growth approach, the material prope
Autor:
Stacy Swider, David Bliss, Juan Fernando Masa Jiménez, V. Hortelano, Candace Lynch, M. Mann, Michael Snure, Vladimir Tassev
Publikováno v:
Journal of Crystal Growth. 352:258-261
Orientation-patterned GaAs (OP-GaAs) has shown promise as an efficient frequency-shifted laser source over the range of 2–12 μm. In order to make OP-GaAs a viable source, efficiency and output power must be significantly increased, which requires