Výsledky vyhledávání

Optical integration of laterally modified multiple quantum well structures by implantation enhanced intermixing to realize gain coupled DFB lasers

Autor: J. Kuhn, R. Lösch, Heinz Schweizer, Hartmut Hillmer, W. Schlapp, F. Scholz, H. Bolay, C. Kaden, V. Hofsäß, Volker Härle

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:471-476

We report on the realization of gain coupled distributed feedback (GC-DFB) lasers using masked implantation enhanced intermixing (MIEI) in a full planar technology. The process requires only planar epitaxy steps to minimize ion straggling. We present

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bdd1615c78e6e5101adc7af9d1830571
https://doi.org/10.1016/0168-583x(95)00755-5

Zobrazit plný text záznamu

Molecular beam epitaxy growth of lattice-matched multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

Autor: A. Hase, J. Böttcher, Harald Künzel, C. Kaden, Heinz Schweizer, V. Hofsäss

Publikováno v: Journal of Crystal Growth. 150:1323-1327

AlGaInAs GaInAs multiple quantum wells (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI). Suitable molecular beam epitaxy (MBE) growth conditions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f237851d2199f5032d9e63ccafc32103
https://doi.org/10.1016/0022-0248(95)80153-4

Zobrazit plný text záznamu

Interdiffusion behavior inn‐doped and undoped GaInAs/AlGaInAs multiple‐quantum‐well structures grown by molecular‐beam epitaxy

Autor: W. Schlapp, J. Kuhn, R. Lösch, Hartmut Hillmer, Heinz Schweizer, V. Hofsäss

Publikováno v: Journal of Applied Physics. 78:3534-3536

We present investigations on the interdiffusion behavior and thermal stability of n‐doped and undoped GaInAs/AlGaInAs multiple‐quantum‐well structures, grown lattice matched on InP by molecular‐beam epitaxy. The activation energy of the main

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8511973d5046f9c5b13a83caa8d7ce35
https://doi.org/10.1063/1.359992

Zobrazit plný text záznamu

Picosecond laser dynamics of gain‐coupled and index‐coupled InGaAs/InGaAlAs quantum well distributed feedback lasers

Autor: Heinz Schweizer, C. Kaden, Holger Schmidt, J. Kovac, H.-P. Gauggel, A. Hase, H. Künzel, V. Hofsäss

Publikováno v: Applied Physics Letters. 67:816-818

High frequency modulation of gain‐coupled (GC) and index‐coupled (IC) InGaAs/InGaAlAs distributed feedback (DFB) lasers is investigated. Laser dynamics of conventionally fabricated IC DFB lasers are compared with GC DFB lasers realized by the new

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d67bb036b4c23605afc2adb5547fe10
https://doi.org/10.1063/1.115453

Zobrazit plný text záznamu

Gain coupled distributed feedback lasers realized by masked implantation enhanced intermixing

Autor: V. Hofsäss, A. Hase, H. Künzel, H.-P. Gauggel, Heinz Schweizer, C. Kaden

Publikováno v: Applied Physics Letters. 65:3170-3172

Long wavelength 1.3 μm gain coupled distributed feedback (GC‐DFB) lasers were realized by masked implantation enhanced intermixing. On the basis of this full planar technology GC‐DFB lasers with first and second order gratings were fabricated in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dfc983da44242c2af21624446b514c24
https://doi.org/10.1063/1.112471

Zobrazit plný text záznamu

Full planar technology for tunable AlGaInAs/GaInAs-lasers by masked implantation enhanced intermixing

Autor: F. Scholz, Heinz Schweizer, V. Hofsäss, C. Kaden, A. Hase, H. Künzel, H. Kovac

Publikováno v: 1993 (5th) International Conference on Indium Phosphide and Related Materials.

The authors report on the advances in ion implantation technology taking advantage of a masked implantation enhanced intermixing (MIEI)-technique for molecular beam epitaxy (MBE)-AlGaInAs/GaInAs multiple quantum well (MQW)-laser structures to realize

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::114e0e62676f53d03fb7afde96bbf737
https://doi.org/10.1109/iciprm.1993.380639

Zobrazit plný text záznamu

Gain coupled AlGaInAs/GaInAs DFB-lasers utilizing gratings by masked implantation enhanced intermixing

Autor: Heinz Schweizer, Holger Schmidt, H. Kovac, V. Hofsäss, C. Kaden, A. Hase, H. Künzel

Publikováno v: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Masked implantation enhanced intermixing (MIEI) offers the advantage of a full planar technology for realization of gain coupled (GC)-DFB-lasers with the potential of a simplified laser/waveguide coupling with a reduced number of process steps for in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bee908e6f4fd306e7fbc36504e4ede76
https://doi.org/10.1109/iciprm.1994.328187

Zobrazit plný text záznamu

Carrier dynamics of gain-coupled and index-coupled InGaAs/lnGaAIAs quantum well distributed feedback lasers

Autor: A. Hase, H. Künzel, Heinz Schweizer, J. Kuhn, H.-P. Gauggel, Hartmut Hillmer, J. Kovac, Holger Schmidt, C. Kaden, V. Hofsäß

Publikováno v: Ultrafast Electronics and Optoelectronics.

Picosecond pulse generation in semiconductor lasers is indispensable for ultrafast optical information processing systems. For the application in high data-rate systems based on optical fiber transmission links single mode lasers with high modulation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6682eb667dbab2bfd70b07d2478f95e7
https://doi.org/10.1364/ueo.1995.utua5

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání