Zobrazeno 1 - 10
of 36
pro vyhledávání: '"V. Haxha"'
Autor:
Max A. Migliorato, Mark Hopkinson, Huiyun Liu, Matthew J. Steer, R. Garg, V. Haxha, D. J. Mowbray, JM José Maria Ulloa, I. Drouzas, PM Paul Koenraad
Publikováno v:
Microelectronics Journal, 40(3), 533-536. Elsevier
In this paper, we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type and demonstrate that we can obtain a deep level of insight into the properties of the epitaxially grown quaternary alloy InGaAsSb. We find that
Autor:
V. Haxha, Max A. Migliorato, PM Paul Koenraad, I. Drouzas, JM José Maria Ulloa, M Murat Bozkurt, Matthew J. Steer, Huiyun Liu, Mark Hopkinson, D. J. Mowbray
Publikováno v:
Physical Review B, 80(16):165334, 165334-1/12. American Physical Society
We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling micr
Publikováno v:
Tse, G, Pal, J, Monteverde, U, Garg, R, Haxha, V, Migliorato, M A & Tomić, S 2013, ' Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors ', Journal of Applied Physics, vol. 114, no. 7, 073515 . https://doi.org/10.1063/1.4818798
This work explores the strain dependence of the piezoelectric effect in GaAs and InAs zinc blende crystals. We write the polarization in terms of the internal anion-cation displacement and the ionic and dipole charges. We then use ab initio density f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f0966fd88ba9b174db880ecd235f9e3
https://pure.manchester.ac.uk/ws/files/30180361/POST-PEER-REVIEW-NON-PUBLISHERS.PDF
https://pure.manchester.ac.uk/ws/files/30180361/POST-PEER-REVIEW-NON-PUBLISHERS.PDF
Publikováno v:
2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the a
Publikováno v:
Physical Review B. 84
Firstand second-order piezoelectric coefficients for all binary group-III nitride (III-N) wurtzite semiconductors are calculated using ab initio density functional theory. The method used allows the simultaneous determination of spontaneous and strai
Publikováno v:
AIP Conference Proceedings.
Atomistic Molecular Dynamics and Molecular Statics simulations are nowadays capable of accessing highly sophisticated high performance computer architectures. Therefore it is becoming natural to push these methods towards realistic experimental sizes
Publikováno v:
2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Advances in nanofabrication techniques have opened a plethora of opportunities to exploit the electrical and optical properties of exotic nanostructures such as Quantum Dots. Internal strain in such nanostructures facilitates band engineering. In thi
Autor:
Max A. Migliorato, Matthew J. Steer, I. Drouzas, R. Garg, V. Haxha, Mark Hopkinson, PM Paul Koenraad, JM José Maria Ulloa, D. J. Mowbray, Huiyun Liu
Publikováno v:
Optical and Quantum Electronics, 40(14-15), 1143-1148. Springer
In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type to study the strain energy of the quaternary alloy InGaAsSb. We use our results to compute modified segregation energies in an improved kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9e5cd8f94ccce024770727986312076
https://research.tue.nl/nl/publications/10f4b9de-c5d3-4bb9-acf8-7081305cd4d6
https://research.tue.nl/nl/publications/10f4b9de-c5d3-4bb9-acf8-7081305cd4d6
Autor:
JM José Maria Ulloa, I. Drouzas, R. Garg, PM Paul Koenraad, Max A. Migliorato, V. Haxha, Mark Hopkinson, H.Y. Liu, Matthew J. Steer, D. J. Mowbray
Publikováno v:
NUSOD '08 : Proceedings of the 8th International Conference on Numerical Simulation of Optoelectronic Devices | 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008 | 01/09/2008-05/09/2008 | Nottingham, UK
University of Manchester-PURE
Archivo Digital UPM
instname
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK, 111-112
STARTPAGE=111;ENDPAGE=112;TITLE=2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK
University of Manchester-PURE
Archivo Digital UPM
instname
2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK, 111-112
STARTPAGE=111;ENDPAGE=112;TITLE=2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08 1-4 Sept. 2008, Nottingham, UK
In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7acade741563f283429dbb8b4c7156ba
http://oa.upm.es/3894/
http://oa.upm.es/3894/
Publikováno v:
Journal of Physics: Conference Series. 367:012006
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charg