Zobrazeno 1 - 10
of 66
pro vyhledávání: '"V. Gavryushin"'
Publikováno v:
Zhurnal voprosy neirokhirurgii imeni N. N. Burdenko. 84(2)
In the current literature, brainstem hematomas and various types of vascular micromalformations are combined into the one group of diseases under the general name «cavernous angioma» (CA). This approach does not make it possible to accurately deter
Autor:
A. S. Tsukanov, A. M. Kuzminov, A V Gavryushin, D. V. Vyshegorodtsev, O A Maynovskaya, M Kh Toboeva, V Yu Korolik
Publikováno v:
Zhurnal voprosy neirokhirurgii imeni N. N. Burdenko. 83(6)
Turcot syndrome is a rare hereditary syndrome characterized by a combination of brain tumors and colorectal cancer. According to the literature, about 150 such cases have been reported. This article presents a rare clinical case and a literature revi
Autor:
D I Pitskhelauri, A V Gavryushin, A B Kadasheva, K N Lapteva, E Yu Sokolova, Ivan A. Savin, V V Podlepich, A V Kozlov
Publikováno v:
Zhurnal voprosy neirokhirurgii imeni N. N. Burdenko. 81(5)
Epileptic seizures developing for the first time after a neurosurgical intervention (de novo seizures) are a challenge for choosing an optimal treatment. The pathogenesis of these seizures is often associated with factors that become inactive in the
Autor:
Vitalijus Bikbajevas, V. Gavryushin, Vytautas Grivickas, Alexander K. Fedotov, Alexander V. Mazanik, Olga V. Korolik, K. Gulbinas
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:639-642
We reveal the intrinsic band-to-band photoluminescence (PL) in Tl-based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for k ⊥ c, where c is the layers stacking axis, and is dependent on polarization. In
Autor:
V. Gavryushin, N. Starzhinskiy, D. Shevchenko, A. Zhukov, I. Zenya, Jūras Mickevičius, G. Tamulaitis
Publikováno v:
Journal of Luminescence. 143:473-478
Photoluminescence properties of ZnSe scintillation crystals co-doped with oxygen and aluminum are studied together with conventional tellurium-doped ZnSe scintillators, for comparison, under continuous-wave and pulsed excitation in the temperature ra
Autor:
V. Gavryushin, K. Gulbinas, Augustinas Galeckas, Paulius Grivickas, Vytautas Grivickas, Vitalijus Bikbajevas
Publikováno v:
physica status solidi (a). 208:2186-2192
Absorption measurements of TlGaSe2 crystals intentionally doped with Fe show growing optical transitions below the band gap energies as impurity concentration increase. The comprehensive theoretical analysis is performed for elucidation of subband ab
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:311-315
We report on optical study of charge carrier dynamics in vapor phase grown ZnO single crystals with different content of deep defects. Deep defects were controlled by applying various heat treatment regimes to each crystal. A time-resolved picosecond
Publikováno v:
Russian Journal of Applied Chemistry. 79:861-864
Wetting angles and limits of thermal stability of esters derived from pentaerythritol and perfluoro-, ω-chloropolyfluoro-, and perfluoropolyethercarboxylic acids were studied.
Publikováno v:
JETP Letters. 83:22-27
A model is proposed and calculations are performed to elucidate the effects of anomalous kinetics and dynamics of transient light self-diffraction signals (“a dip and a buildup” upon the termination of the grating generation pulse and saturation
Publikováno v:
Lithuanian Journal of Physics. 46:205-210
The form and electronic structure of the valence band (VB) of the ferroelectric SbSI crystal was calculated by solving the HartreenFocknRoothaan matrix equation. The diagonal eigenvalue matrix " gives the electron state energies. These energies were