Zobrazeno 1 - 10
of 66
pro vyhledávání: '"V. Garber"'
Publikováno v:
A49. CARDIAC AND VASCULAR CRITICAL CARE CASES.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d5a911e47b8d9f1b79c0c9d5be8359
https://doi.org/10.1164/ajrccm-conference.2023.207.1_meetingabstracts.a1781
https://doi.org/10.1164/ajrccm-conference.2023.207.1_meetingabstracts.a1781
Publikováno v:
C54. CASES OF INFECTIOUS DISEASES IN THE ICU - I.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e19fbf6a38dbd098e05d0992f14b3deb
https://doi.org/10.1164/ajrccm-conference.2023.207.1_meetingabstracts.a5352
https://doi.org/10.1164/ajrccm-conference.2023.207.1_meetingabstracts.a5352
Publikováno v:
Water, Air, and Soil Pollution. 163:355-378
Functional roles of Schoenoplectus californicus, giant bulrush, were evaluated in an 3.2 ha (8-acre) constructed wetland treatment system receiving copper-contaminated water. The constructed wetland used in this research was designed to decrease bioa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6a95e3fbfd51737d6887c626615fb5
https://doi.org/10.1007/s11270-005-1297-3
https://doi.org/10.1007/s11270-005-1297-3
Publikováno v:
physica status solidi (a). 188:345-349
We have implemented Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration. The devices exhibit a high gain at both reverse and forward bias. The gain mechanism is attributed to trapping of minority carriers at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3df0e9c9e4c7bf7db54c24cf2331b78
https://doi.org/10.1002/1521-396x(200111)188:1<345::aid-pssa345>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<345::aid-pssa345>3.0.co
Publikováno v:
Journal of Electronic Materials. 30:704-710
We report on a new, simple process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639e89462074fb80dc55cfbb9a62b149
https://doi.org/10.1007/bf02665859
https://doi.org/10.1007/bf02665859
Publikováno v:
Journal of Electronic Materials. 30:690-695
A new, simple nondestructive procedure for the estimation of the junction depth in planar long wavelength HgCdTe photodiodes is presented. The technique uses a combination of scanning light beam-induced current data with a transversal photovoltage me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4349213dcbee36d3253a80532f87bd19
https://doi.org/10.1007/bf02665857
https://doi.org/10.1007/bf02665857
Autor:
Gad Bahir, Vissarion Mikhelashvili, A. Peer, Gadi Eisenstein, S. Fainleib, V. Garber, Meir Orenstein, Dan Ritter
Publikováno v:
Journal of Applied Physics. 85:6873-6883
We describe a parameter extraction technique for the simultaneous determination of physical parameters in nonideal Schottky barrier, p-n and p-i-n diodes. These include the ideality factor, saturation current, barrier height, and linear or nonlinear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c65289e9fe38bf06679aa8d9ec17607
https://doi.org/10.1063/1.370206
https://doi.org/10.1063/1.370206
Publikováno v:
Journal of Electronic Materials. 24:1321-1328
We have studied the infrared transmission spectrum and the optical performance of HgCdTe photodiodes containing a linear composition gradient in the active layer. Our objectives were to enable the prediction of the optical performance of a photodiode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7bc3123c41d6bab11d6793f77302f7
https://doi.org/10.1007/bf02653091
https://doi.org/10.1007/bf02653091
Publikováno v:
Journal of Electronic Materials. 24:1169-1174
In this study, CdTe epilayers were grown by metalorganic chemical vapor deposition on epitaxial HgCdTe with the purpose of developing suitable passivation for HgCdTe photodiodes. Two types of CdTe layers were investigated. One was grown directly,in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb34912c1a9b02b001710d1efa134b06
https://doi.org/10.1007/bf02653070
https://doi.org/10.1007/bf02653070
Publikováno v:
Journal of Electronic Materials. 24:655-659
We investigate the electrical properties of isotype P-p CdTe/Hg0.775Cd0.225Te heterojunctions grown in situ by the metalorganic chemical vapor deposition technique. The capacitance-voltage (C-V) characterization of Schottky barriers (SB) is used to s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a9a5d1f5292f3aaf81b148f45491ac
https://doi.org/10.1007/bf02657975
https://doi.org/10.1007/bf02657975