Zobrazeno 1 - 10
of 12
pro vyhledávání: '"V. G. Weizer"'
Autor:
V. G. Weizer, N.S. Fatemi
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The possibility of providing low-resistance contacts to shallow-junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures is investigated. It i
Autor:
V. G. Weizer, N.S. Fatemi
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The possibility of eliminating the gross mechanical changes that take place during sintering while retaining the processes that reduce contact resistivity is investigated. The relevant metallurgy is reviewed. As the sintering process proceeds in the
Publikováno v:
Journal of Applied Physics. 50:4443-4449
The effect of instability in terrestrial solar cells and identification of mechanisms involved are presented. The effect is similar to photon-induced degradation in radiation-damaged space solar cells, with reduction in cell output in n(+)/p cells up
Autor:
V. G. Weizer, J. D. Broder
Publikováno v:
Journal of Applied Physics. 53:5926-5930
A model that explains the flat-spot power loss phenomenon is presented. Evidence suggests that the effect is due to localized metallurgical interactions between the silicon substrate and the contact metallization. These reactions are shown to result
Autor:
V. G. Weizer, N. S. Fatemi
Publikováno v:
Journal of Electronic Materials. 18:7-13
Evidence is presented showing that the presence of the commonly used anti-reflection coating material Ta2O5 on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elev
Publikováno v:
Physical Review. 113:781-784
Publikováno v:
IEEE Transactions on Electron Devices. 33:156-158
An experimental technique is used to determine the relative values of the base and emitter components of the dark saturation current of six types of high-voltage low-resistivity silicon solar cells. One of the suprising findings is the suggestion tha
Autor:
V. G. Weizer, R. Delombard
Publikováno v:
Applied Physics Letters. 49:201-203
Measurement of the minority‐carrier mobility in the base region of the high‐voltage metal‐insulator‐N‐P solar cell, as well as in other 0.1 Ω cm cells, provides direct proof that the high voltages measured for that cell are due not only to
Autor:
L. A. Girifalco, V. G. Weizer
Publikováno v:
Physical Review. 120:837-839
The binding energy of two vacancies in a static lattice as a function of their separation and the positions of their displaced neighboring atoms has been calculated using a Morse potential function model for copper. It was found that two vacancies at
Autor:
N.S. Fatemi, V. G. Weizer
Publikováno v:
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference.
Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reactio