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Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
Autor:
V. G. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Publikováno v:
Âderna Fìzika ta Energetika, Vol 16, Iss 3, Pp 238-241 (2015)
Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avala
Externí odkaz:
https://doaj.org/article/41157c8c486947da97330a698511f2ab
