Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V. G. Stel'makh"'
Autor:
V. G. Stel’makh, I. D. Yadgarov
Publikováno v:
Letters on Materials. 9:344-348
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58a91bc301a74d486c7916e22498eeb
https://doi.org/10.22226/2410-3535-2019-3-344-348
https://doi.org/10.22226/2410-3535-2019-3-344-348
Publikováno v:
Современные тенденции развития физики полупроводников: достижения, проблемы и перспективы.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efcf7e9c6343b7f2b595b6087d691017
https://doi.org/10.47100/conference_physics/s2_21
https://doi.org/10.47100/conference_physics/s2_21
Publikováno v:
Applied Solar Energy. 44:276-280
The results of papers dealing with computation of the recombination processes of nonequilibrium electrons and holes in semiconductors with deep impurities are reviewed. It is shown that at high excitation levels, when many defects and defect-impurity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63813a59298f1e397089dc215980b81a
https://doi.org/10.3103/s0003701x08040105
https://doi.org/10.3103/s0003701x08040105
Publikováno v:
Technical physics
Processes of defect formation as a result of scattering of carbon atoms with energies of 10 and 100 eV by graphene at different angles of incidence are studied by the molecular dynamics method. The possibility of formation of a carbon adatom and vaca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4ad3f63535392641628182153ebef3e
https://hdl.handle.net/10067/1255550151162165141
https://hdl.handle.net/10067/1255550151162165141
Publikováno v:
2014 International Conference on Computer Technologies in Physical and Engineering Applications (ICCTPEA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e14718b21bb1756dab0b7732776cf4a
https://doi.org/10.1109/icctpea.2014.6893362
https://doi.org/10.1109/icctpea.2014.6893362
Autor:
A. Yu. Leiderman, V. G. Stel’makh
Publikováno v:
Applied Solar Energy. 44:158-160
Results of calculation of the voltage drop across the base of p-i-n type photocell when the concentration of the effectively working recombination centers decreases in the process of external excitation of the material are presented. It is shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796f939b059fcad05d72d194b4e28fa2
https://doi.org/10.3103/s0003701x0803002x
https://doi.org/10.3103/s0003701x0803002x
Autor:
V. G. Stel’makh, A. Yu. Leiderman
Publikováno v:
Applied Solar Energy. 44:8-10
Using numerical modeling, the voltage drop on the base of the photocells with a base length approximately equal to the minority carrier diffusion path is shown to be non-Ohmic under high irradiance levels; this should be taken into account when calcu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85e06eaa2357d9585a0b85003d34ff69
https://doi.org/10.3103/s0003701x08010039
https://doi.org/10.3103/s0003701x08010039
Publikováno v:
Combustion, Explosion, and Shock Waves. 19:239-246
1. Numerical modeling of the loading of an iron slab by an explosion showed that the simple kinetic relationship proposed for the fracture computation will assure a realistic description of the fracture process. 2. A detailed description of the fract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff8d9265a4e2ad6450a54a586044c322
https://doi.org/10.1007/bf00789248
https://doi.org/10.1007/bf00789248