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pro vyhledávání: '"V. G. Pashkovskiy"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:726-730
A plasma accelerator based on inductively coupled plasma source, which is able to produce an axially directed flux of accelerated ions onto the wafer without applying the bias voltage, has been studied and utilized in a semiconductor etch process. Io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b8734dd7e05b22983a5e61541a23788
https://doi.org/10.1116/1.2743647
https://doi.org/10.1116/1.2743647
