Zobrazeno 1 - 10
of 15
pro vyhledávání: '"V. G. Mishustin"'
Publikováno v:
2020 ELEKTRO.
In this paper we present description of the developed current DLTS spectrometer to investigate deep energy levels in barrier structures based on crystalline and non-crystalline semiconductors with large rectifying junction area and high leakage curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0d98610f6266de34a8fc7de1c66256
https://doi.org/10.1109/elektro49696.2020.9130257
https://doi.org/10.1109/elektro49696.2020.9130257
Autor:
A. V. Ermachikhin, V. V. Gudzev, N. V. Vishnyakov, E. I. Terukov, S. P. Vikhrov, V. G. Litvinov, V. G. Mishustin, D. V. Shilina, A. S. Titov, A.D. Maslov
Publikováno v:
Semiconductors. 52:926-930
The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e18dfba303c36a2038d0598014559dd
https://doi.org/10.1134/s1063782618070254
https://doi.org/10.1134/s1063782618070254
Publikováno v:
Vestnik of Ryazan State Radio Engineering University. :23-29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb751ccf61018b464d9892768a3ef77
https://doi.org/10.21667/1995-4565-2018-66-4-2-23-29
https://doi.org/10.21667/1995-4565-2018-66-4-2-23-29
Autor:
N. V. Vishnyakov, V. G. Litvinov, A. D. Maslov, A. V. Ermachikhin, N. M. Tolkach, V. V. Gudzev, Yu. V. Vorobyov, V. G. Mishustin, D. S. Kusakin, T. A. Kholomina
Publikováno v:
Vestnik of Ryazan State Radio Engineering University. 60:164-170
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8c8fd090f5d2d38211d5b0856cefbd
https://doi.org/10.21667/1995-4565-2017-60-2-164-170
https://doi.org/10.21667/1995-4565-2017-60-2-164-170
Publikováno v:
MECO
In this paper we suggest a model to calculate current-voltage characteristics of double-junction solar cells based on a-Si:H/a-SiC:H. The model considers features of these materials. We simulated I-V dependences of the solar cell as consequent p-i-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd635bc74e825792eac8c0a31eb4f2d
https://doi.org/10.1109/meco.2018.8405991
https://doi.org/10.1109/meco.2018.8405991
Autor:
V. G. Mishustin, A. D. Maslov, V. V. Gudzev, E. V. Bezuglaya, A. V. Ermachikhin, Yu. V. Vorobyov
Publikováno v:
MECO
In this paper we focused on separation of dominating recombination region that limits total charge carrier lifetime and efficiency in conventional multicrystalline silicon solar cell. According to the Grover's model, we considered SRH-recombination i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566164772a249846c52adf2640499724
https://doi.org/10.1109/meco.2018.8405998
https://doi.org/10.1109/meco.2018.8405998
Publikováno v:
2018 ELEKTRO.
In this paper we linked electrophysical properties of multilayer barrier structures based on crystalline and disordered semiconductors with density of electronic states localized in a mobility gap and their energy distribution. We propose experimenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dbd8d91571300fe902385f788349dbd
https://doi.org/10.1109/elektro.2018.8398338
https://doi.org/10.1109/elektro.2018.8398338
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:773-777
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db464ef15245c05b29538bfb3b80d3e4
https://doi.org/10.1166/jno.2014.1674
https://doi.org/10.1166/jno.2014.1674
Publikováno v:
MECO
The present paper is devoted to research of multilayer barrier structures for solar cells on the basis of crystalline and disordered semiconductors. Influence of quantum-dimensional effects on effective height of barriers in disordered semiconductors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d1699f848ce9ce0cc08695e8021a69
https://doi.org/10.1109/meco.2017.7977220
https://doi.org/10.1109/meco.2017.7977220
Publikováno v:
MECO
This work is related with development of a physical model of potential barriers in semiconductor structures based on non-crystalline semiconductors. This model will help to analyze multilayer semiconductor barrier structures and calculate their elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccb9490a3baec3a760f660720b6b3404
https://doi.org/10.1109/meco.2017.7977219
https://doi.org/10.1109/meco.2017.7977219