Zobrazeno 1 - 10
of 49
pro vyhledávání: '"V. G. Lifshits"'
Autor:
A. L. Aseev, T. I. Grigor’eva, V. V. Atuchin, S. S. Shaĭmeev, D. V. Gritsenko, O. P. Pchelyakov, Vladimir A. Gritsenko, L. D. Pokrovskiĭ, V. G. Lifshits
Publikováno v:
Physics of the Solid State. 48:224-228
The contribution of electrons and holes to the electrical conduction of titanium dioxide TiO2 in the Si/TiO2/Al structure is determined in experiments on the injection of minority carriers from n-type and p-type silicon layers. It is established that
Publikováno v:
Surface Science. 596:53-60
Using scanning tunneling microscopy (STM), the early stages of the Cr/Si(1 1 1) interface formation was studied. Two growth regimes, solid phase epitaxy and reactive deposition epitaxy, were employed. Deposited Cr amount was varied from 0.1 to 2.0 mo
Autor:
Svetlana V. Kuznetsova, Namjil Enebish, Chiei Tatsuyama, Boris K. Churusov, D. A. Tsukanov, V. G. Lifshits, Dmitriy Gruznev, Yury L. Gavrilyuk, Serguei V. Ryjkov
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 2:56-76
The general observations concerning the commonly accepted terms related to Si surface like 'surface', 'surface phase', 'adatoms', 'in phase' and 'on phase' atoms are given. Surface phases preparation, composition and their role in surface processes i
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 1:72-79
We investigated the initial stages of Ag growth on a Si(111)-4×1-In surface at room temperature (RT) and low temperatures (LT, 70∼120K) in situ by reflection-high-energy electron diffraction (RHEED), scanning tunnelling microscopy (STM) and electr
Autor:
V. G. Lifshits, Andrey V. Zotov, V.G. Kotlyar, Alexander A. Saranin, O. V. Bekhtereva, Kenjiro Oura, M. A. Cherevik, T. V. Kasyanova, Mitsuhiro Katayama
Publikováno v:
e-Journal of Surface Science and Nanotechnology. 1:33-40
Using scanning tunneling microscopy observations, the ability of group III metals, In, Al, Ga and Tl, to form identical-size magic nanoclusters upon high-temperature adsorption on Si(100) has been examined. Magic clustering has been detected in In/Si
Publikováno v:
Surface Science. 517:151-156
Using scanning tunneling microscopy (STM) and low energy electron diffraction, the structure of the Al/Si(1 1 1) γ-phase has been studied. The STM observations with atomic resolution in conjunction with the quantitative characterization of the γ-ph
Autor:
Mitsuhiro Katayama, Osamu Kubo, Alexander A. Saranin, V. G. Lifshits, V.G. Kotlyar, Andrey V. Zotov, H. Ohnishi, Kenjiro Oura
Publikováno v:
Surface Science. 506:80-86
Using low-energy electron diffraction, Auger electron spectroscopy and STM, the peculiarities of the Al/Si(1 0 0) interface formation at 400–550 °C has been studied. At low Al coverages (∼0.05–0.2 ML), interaction of Al atoms with a top Si(1 0
Autor:
Kenjiro Oura, E.N. Chukurov, A.N. Tovpik, M. A. Cherevik, Mitsuhiro Katayama, Andrey V. Zotov, V. G. Lifshits, Alexander A. Saranin
Publikováno v:
Surface Science. 450:34-43
Surface composition (In coverage and top Si atom density) and plausible adsorption sites of In atoms have been determined for the Si(111) 31 × 31 -In surface phase using scanning tunneling microscopy. The usage of indirect heating for the In–Si(11
Autor:
Andrey V. Zotov, T. Harada, Alexander A. Saranin, Osamu Kubo, Kenjiro Oura, V. G. Lifshits, Mitsuhiro Katayama
Publikováno v:
Surface Science. 447:15-24
Using scanning tunneling microscopy, the changes in the morphology and atomic structure of the Si(111)5 3 ×5 3 -Sb surface during Sb desorption have been studied. It has been found that the Si(111)5 3 ×5 3 -Sb surface phase does not have a definite
Publikováno v:
Surface Science Reports. 35:1-69
The present report deals with the main aspects of the interaction of hydrogen with the atomically clean crystalline silicon surfaces and submonolayer metal/silicon interfaces. After a brief presentation of the experimental techniques applied nowadays