Výsledky vyhledávání - "V. G. Goryachev"

The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them

Autor: V. G. Goryachev, K. L. Enisherlova, V. G. Saraykin, S. A. Kapilin

Publikováno v: Russian Microelectronics. 46:591-599

AlGaN/GaN heterostructures and AlGaN/GaN/SiC HEMT-transistors’ Schottky barriers (SBs) are studied by the capacitance–voltage (CV) method and the SIMS method in order to determine the causes of the capacitance instability in some cases. It is sho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f18631c270da95cc8600628a9b20621
https://doi.org/10.1134/s1063739717080066

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The instability of the CV characteristics capacitance when measuring AlGaN/GaN–heterostructures and the HEMT–transistors based on them

Autor: V. G. Goryachev, K. L. Enisherlova, V. G. Saraykin, S. A. Kapilin

Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 19:115-123

A complex of studies of the AlGaN/GaN heterostructures and the AlGaN/GaN/SiC HEMT-transistors Schottky barriers has been carried out by the C-V method and the SIMS method in order to determine the causes of the capacitance instability in some cases w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f93e22763c1e7aea9bd17ea3a222c92
https://doi.org/10.17073/1609-3577-2016-2-115-123

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Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures

Autor: K. L. Enisherlova, V. G. Goryachev, S. A. Kapilin, E. M. Temper

Publikováno v: Russian Microelectronics. 44:537-545

The influence of the silicon epitaxial layer’s peculiarities and the silicon–sapphire interface in the silicon-on-sapphire (SOS) structure on the capacitance parameters of MIS-structures formed on SOS with submicron layers of silicon has been stu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::441e73fc1f0dda9ef53060c8cb1f2af4
https://doi.org/10.1134/s106373971508003x

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AlxGa(1-x)N/GaN structure diagnostic by C-V characteristics method

Autor: E. M. Temper, I. B. Gulyaev, A. U. Dorofeev, N. B. Gladisheva, K. L. Enisherlova, V. G. Goryachev

Publikováno v: SPIE Proceedings.

Nondestructive diagnostic method was developed for epitaxial heterostructure quality prediction. Such prediction is very important for production of some types HF FETs. The various heterostructure modifications grown on sapphire substrates have been

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e08987ba9049eb8897913907b11106d9
https://doi.org/10.1117/12.802461

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