Zobrazeno 1 - 10
of 20
pro vyhledávání: '"V. G. Galstyan"'
Publikováno v:
Semiconductors. 49:1134-1139
The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentratio
Publikováno v:
Russian Physics Journal. 57:1436-1441
The region of the edge emission spectrum of CdS(O) single crystals with cadmium excess is examined. An anomalous series of equidistant bands with leading line at 514 nm and phonon replicas has been revealed. These bands grow in intensity with increas
Publikováno v:
Semiconductors. 47:1018-1025
The microcathodoluminescence (MCL) and photoreflection spectra of CdS:O layers implanted with oxygen ions to 4 × 1020 cm−3 are investigated. Used method of MCL spectroscopy yields information only about the implanted-layer volume. Exciton MCL spec
Autor:
V. G. Galstyan, V. M. Lisitsyn, S. S. Vil’chinskaya, V. M. Semenov, V. I. Oleshko, N. K. Morozova, N. D. Danilevich
Publikováno v:
Semiconductors. 43:1628-1634
The nature of luminescence bands prevailing in the near-edge spectrum of the CdS(O) crystals at high excitation intensities (1025–1026 cm−3 s−1) is clarified. It is shown that the alloys containing oxygen dissolved in II–VI crystals represent
Publikováno v:
Semiconductors. 42:1023-1029
The anticrossing band theory, which specifies the change induced in the band structure by an isoelectronic impurity substantially distorting the lattice, is used to interpret the nature and specific features of the complex self-activated luminescence
Publikováno v:
Semiconductors. 42:131-136
A new interpretation of self-activated luminescence spectra of II–VI compounds is suggested. This interpretation is based on the theory of the conduction-band splitting induced by oxygen isoelectronic impurity and makes it possible to interpret, fr
Autor:
E. M. Gavrishchuk, I. A. Karetnikov, V. G. Galstyan, E. V. Yashina, V. G. Plotnichenko, K. V. Golub, N. K. Morozova
Publikováno v:
Inorganic Materials. 40:1138-1145
The pressure (100–200 MPa) and temperature (900–1100°C) effects on the equilibria of native point defects and background impurities in Zn-enriched ZnS are studied using cathodoluminescence and transmission spectra. The optimal conditions are fou
Autor:
V. G. Galstyan, V. V. Blinov, V. S. Zimogorskii, N. K. Morozova, E. V. Yashina, E. M. Gavrishchuk, I. A. Karetnikov
Publikováno v:
Inorganic Materials. 38:552-558
ZnSe was doped with Cu via thermal diffusion from Cu foil in the course of chemical vapor deposition. The Cu distribution over the deposit was studied, and the Cu solubility in ZnSe was determined as a function of temperature. Copper was shown to pre
Publikováno v:
Journal of Applied Spectroscopy. 69:315-319
We have suggested and implemented a method of creation (growing) of sublimate‐screens formed by single‐crystal luminophor columns which are perpendicular to an amorphous (e.g., glass) substrate. The diameters of the columns are 3–5 μm, the hei
Autor:
N. K. Morozova, V. G. Galstyan, V. G. Plotnichenko, V. S. Zimogorskii, E. M. Gavrishchuk, I. A. Karetnikov, V. V. Blinov
Publikováno v:
Inorganic Materials. 37:1228-1234
The effect of oxygen doping (0.9 and 4.3 vol % O2in the gas phase) on the transmission and cathodoluminescence of CVD ZnSe was studied. The incorporation of oxygen was found to reduce the transmission in the spectral range 700–1900 cm–1. Examinat