Zobrazeno 1 - 7
of 7
pro vyhledávání: '"V. G. Bagramov"'
Publikováno v:
Bulletin of the Lebedev Physics Institute. 47:157-161
The dependence of the threshold intensity of the electron beam (EB) on the pulse shape and duration upon lasing excitation in a laser semiconductor target (ST) is considered. It is shown that a minimum EB threshold intensity can be reached before the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1ea30672d5274435ed002f97974e4b
https://doi.org/10.3103/s1068335620060068
https://doi.org/10.3103/s1068335620060068
Autor:
M. B. Bochkarev, A. G. Sadykova, K. A. Sharypov, I. D. Tasmagulov, A S Nasibov, K. V. Berezhnoy, V. G. Bagramov
Publikováno v:
Bulletin of the Lebedev Physics Institute. 46:1-4
The dependence of the pulse shape of laser radiation of a CdS semiconductor target on the parameters of the exciting subnanosecond electron beam (EB) is studied. The effect of the time to reach the threshold excess carrier density (ECD) on the laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a53a127cb9e726ed0f8583e70f67661
https://doi.org/10.3103/s1068335619010019
https://doi.org/10.3103/s1068335619010019
Autor:
V. A. Podvyznikov, V. K. Chevokin, A S Nasibov, V. G. Bagramov, I. D. Tasmagulov, G. L. Danielyan
Publikováno v:
Bulletin of the Lebedev Physics Institute. 45:108-111
A configuration of the multichannel system for diagnostics of radiative processes in various regions of the discharge appearing in semiconductors in response to high-voltage pulses is considered. The system allows real-time recording of spectra, dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4471e372b7c587bbee6c84cacb72bb
https://doi.org/10.3103/s1068335618040036
https://doi.org/10.3103/s1068335618040036
Autor:
M. I. Yalandin, M. B. Bochkarev, K. V. Berezhnoi, S. A. Shunailov, B. I. Vasil’ev, V. G. Bagramov, A. G. Sadykova, A S Nasibov
Publikováno v:
Instruments and Experimental Techniques. 60:710-715
The results of the excitation of СdS semiconductor targets by a subnanosecond electron beam (EB) with an electron energy of 60–230 keV are presented. The maximum intensity of laser radiation from targets for a 1-mm EB diameter exceeded 107 W/cm2 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7652cbeef7a21d9988ced289ed2fa1aa
https://doi.org/10.1134/s0020441217050116
https://doi.org/10.1134/s0020441217050116
Publikováno v:
Bulletin of the Lebedev Physics Institute. 40:97-103
The working principle of the electric-discharge semiconductor focon laser is considered. CdS, CdxZn1−xSe, and CdSxSe1−x plates were used as active medium. In the case of CdS, lasing at λ = 525 nm was observed. The radiation power reached 3 kW, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205fcfd1401252c9defd5cd7e7e1e84a
https://doi.org/10.3103/s1068335613040040
https://doi.org/10.3103/s1068335613040040
Publikováno v:
Bulletin of the Lebedev Physics Institute. 38:101-104
The experimental results on the study of radiation of CdxZn1−xS semiconductor targets (STs) of the gas diode (GD) for the pressure variation from 10−1 Torr to the atmospheric pressure are presented. Pulses 0.5–1 ns long with an amplitude to 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c974b2e722c7ede8594b19b6ee9936f3
https://doi.org/10.3103/s1068335611040038
https://doi.org/10.3103/s1068335611040038
Publikováno v:
Quantum Electronics. 36:159-162
The results of experiments on direct laser printing using viscous printer's ink with the help of a copper vapour laser (CVL)-based device are presented. The highly reflecting CVL cavity mirror was replaced by a spatial mirror modulator (SMM). Viscous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f33b26eef489266220e3a034663927
https://doi.org/10.1070/qe2006v036n02abeh013118
https://doi.org/10.1070/qe2006v036n02abeh013118