Zobrazeno 1 - 7
of 7
pro vyhledávání: '"V. F. Motsnyi"'
Autor:
Kristof Dessein, J. De Boeck, Gustaaf Borghs, V. F. Motsnyi, Ziyang Liu, L. Lagae, Jo Das, H. Boeve, W. Van Roy
Publikováno v:
Semiconductor Science and Technology. 17:342-354
There has been an increased interest in the introduction of magnetic thin films into semiconductors. This interest is motivated by the benefit found in using the magnetic thin-film properties (giant or tunnelling magnetoresistance and hysteresis) in
Publikováno v:
Semiconductors. 35:477-480
The structure of two types of GaAs i-n−-n-n+ epilayers on GaAs〈100〉 semi-insulating substrates was studied by electron microscopy. The low-temperature photoluminescence spectra were measured and their special features were analyzed. It is shown
Publikováno v:
Journal of Physical Studies. 2:555-566
Autor:
W. Van Roy, P. Van Dorpe, V. F. Motsnyi, J. De Boeck, Ziyang Liu, Gustaaf Borghs, Maciej Sawicki
Publikováno v:
Applied physics letters
We demonstrate an electrically injected electron spin polarization in GaAs of 80% at 4.6 K by interband tunneling from the valence band of (Ga,Mn)As into an (Al,Ga)As light-emitting diode. The polarization is analyzed by the oblique Hanle effect and
Autor:
W. Van Roy, V. F. Motsnyi, Gustaaf Borghs, J. Das, Etienne Goovaerts, V.I. Safarov, J. De Boeck
Publikováno v:
Applied physics letters
We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measur
Autor:
Jo De Boeck, V. F. Motsnyi, Willem Van Roy, H. Boeve, Liu Zhiyu, Liesbet Lagae, R Wirix-Speetjens, Gustaaf Borghs, Wayne K. Hiebert, Jo Das
Publikováno v:
Frontiers of Multifunctional Nanosystems ISBN: 9781402005619
BASE-Bielefeld Academic Search Engine
BASE-Bielefeld Academic Search Engine
While the silicon-based CMOS electronics is entering the nano-regime, it is preparing itself to accept new materials for increasing the functionality of the future IC’s. One example is the integration of magnetic multilayer nanostructures for creat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42fef6db64c64b5717b3a0c9243de73b
https://doi.org/10.1007/978-94-010-0341-4_35
https://doi.org/10.1007/978-94-010-0341-4_35
Publikováno v:
Scopus-Elsevier
In this paper, we review our results on the MIS (Metal- InsulatorSemiconductor) spin-source approach including some results on a NiMnSb/Schottky barrier spin-source.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96129b440c404ef3ea931ae4d0268829
http://www.scopus.com/inward/record.url?eid=2-s2.0-0141792834&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0141792834&partnerID=MN8TOARS