Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. F. Kabanov"'
Publikováno v:
Technical Physics Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e71fc63fbf220f27f292255d43de89
https://doi.org/10.1134/s1063785022070033
https://doi.org/10.1134/s1063785022070033
Publikováno v:
Semiconductors. 55:470-475
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229a820a13f4ed3945a883c7de8c5073
https://doi.org/10.1134/s1063782621040199
https://doi.org/10.1134/s1063782621040199
Publikováno v:
Semiconductors. 55:315-318
The impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae16111dcd44d774a2cdbfbfd6ed2eb
https://doi.org/10.1134/s1063782621030106
https://doi.org/10.1134/s1063782621030106
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 12:113-117
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38dbf27cd3fb3bc991eedc694dc9fc42
https://doi.org/10.17586/2220-8054-2021-12-1-113-117
https://doi.org/10.17586/2220-8054-2021-12-1-113-117
Publikováno v:
Technical Physics Letters. 47:385-387
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df983f23976a7eab557d7e94b54c5baf
https://doi.org/10.1134/s1063785021040209
https://doi.org/10.1134/s1063785021040209
Publikováno v:
Technical Physics Letters. 46:339-341
The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage characteristics. Electron tunneling with the discrete spectrum of QDs taken into acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c538d2f580fb6205aa15b4bbbfc1ee
https://doi.org/10.1134/s1063785020040100
https://doi.org/10.1134/s1063785020040100
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 10:720-724
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18a8f4d5160723331c2f446cf6e7efe
https://doi.org/10.17586/2220-8054-2019-10-6-720-724
https://doi.org/10.17586/2220-8054-2019-10-6-720-724
Publikováno v:
Semiconductors. 52:750-754
The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38835a702b01fb555bfff9cce608df3
https://doi.org/10.1134/s1063782618060155
https://doi.org/10.1134/s1063782618060155
Autor:
D. S. Mosiyash, M. I. Shishkin, A. I. Mihaylov, Ya. E. Pereverzev, N. D. Zhukov, A. A. Hazanov, V. F. Kabanov
Publikováno v:
Semiconductors. 52:78-83
The systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af180940f7ba6c3c9f2a6c02c0eb3c0
https://doi.org/10.1134/s1063782618010256
https://doi.org/10.1134/s1063782618010256
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. :596-599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3480b408a738aeccff079d3044a2ea9
https://doi.org/10.17586/2220-8054-2017-8-5-596-599
https://doi.org/10.17586/2220-8054-2017-8-5-596-599