Zobrazeno 1 - 10
of 52
pro vyhledávání: '"V. F. Elesin"'
Autor:
V. F. Elesin, Konstantin S. Grishakov
Publikováno v:
IEEE Transactions on Electron Devices. 64:2963-2969
Within the framework of the coherent quantum-mechanical model, which is based on the solution of the time-dependent Schrodinger equation with exact open boundary conditions, we have numerically analyzed the behavior of the InGaAs/AlAs resonant-tunnel
Publikováno v:
Physics Procedia. 72:460-464
The impact of diamond and graphene heat spreading layers on the thermal and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulations in the hydrodynamic model. It is shown th
Autor:
V. F. Elesin
Publikováno v:
Journal of Experimental and Theoretical Physics. 120:115-124
An analytic solution to the problem of current passage via an ideal insulator in the case of monopolar hole injection has been found. The current-voltage (J-V) characteristics have been obtained for the first time in a broad range of parameters (insu
Publikováno v:
Advances in Materials Science and Engineering, Vol 2017 (2017)
The presented article contains the numerical calculations of the InGaAs/AlAs resonant tunneling diode’s (RTD) response to the AC electric field of a wide range of amplitudes and frequencies. These calculations have been performed within the coheren
Autor:
V. F. Elesin
Publikováno v:
Journal of Experimental and Theoretical Physics. 118:951-958
An analytic solution to the problem on transient processes in a two-barrier nanostructure is found. Explicit expressions are obtained for a transient current produced by an instantly applied weak electric field. The current relaxes to a stationary st
Autor:
V. F. Elesin
Publikováno v:
Journal of Experimental and Theoretical Physics. 117:950-962
The problem of the effect of electron-electron interaction on the static and dynamic properties of a double-barrier nanostructure (resonant tunneling diode (RTD)) is studied in terms of a coherent tunneling model, which includes a set of Schrodinger
Autor:
V. F. Elesin, M. A. Remnev
Publikováno v:
Nanotechnologies in Russia. 8:250-254
The dependence of the peak current in the I–V characteristic of a resonant tunneling diode on the emitter spacer thickness has been investigated by numerically solving the Schrodinger equation. This dependence has pronounced maxima in which the pea
Publikováno v:
Physics Procedia. 36:1206-1210
In the present work, dynamics of vortex structure in the type-II superconductors with defects under a transport current has been studied using the time dependent Ginzburg-Landau equations. The vortex interactions with the pining centers in two-dimens
Publikováno v:
Russian Physics Journal. 52:1212-1223
Results of modeling of superconductor magnetization process based on a numerical solution of the timedependent Ginsburg-Landau equations are presented. Methods of grid approximation of the equations and method of finite elements are used. Two-dimensi
Publikováno v:
Semiconductors. 43:257-261
The self-consistent solution for the Schrodinger and Poisson equations in the Hartree-Fock approximation is applied to the study of the effect of electron-electron interaction on the high-frequency characteristics for a double-well nanostructure. The