Zobrazeno 1 - 10
of 10
pro vyhledávání: '"V. E. Strelnitsky"'
Autor:
V.E. Kutny, A. A. Vierovkin, V. I. Gritsyna, Aleksey E. Bolotnikov, P. M. Fochuk, V.L. Uvarov, Stanislav Dudnik, A. V. Rybka, A. E. Tenishev, O. A. Opalev, V. E. Strelnitsky, I. N. Shlyahov, L.N. Davydov, Ralph B. James, V. A. Shevchenko
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV.
We developed radiation-hard diamond detectors for registering intense fields of high energy electrons and X-rays, and monitoring the mode of operation of electron accelerators. After synthesizing a diamond film of detection quality up to 350-microns
Autor:
Vitali I. Konov, N I Chapliev, V. E. Strelnitsky, I.M. Chistyakov, V.Ya. Volkov, V. G. Ralchenko, V.Yu. Armeyev
Publikováno v:
Materials and Manufacturing Processes. 8:9-17
The formation of conductive lines into a dielectric diamond-like carbon film via the graphitization of an amorphous phase under the action of a scanning Ar+ laser beam is reported. The nucleation of small (≤ 30 A) graphite crystallites, as evidence
Autor:
A.V. Kuzmichov, A.A. Smolin, V.P. Ageev, V. E. Strelnitsky, B.N. Pypkin, N I Chapliev, V.F. Dorfman, Taras V. Kononenko, T. N. Glushko
Publikováno v:
Surface and Coatings Technology. 47:269-278
The interaction of excimer laser irradiation with diamond-like carbon films was studied. The results of laser-induced changes in optical properties, structure and surface morphology are presented. It is shown that local changes in optical properties
Publikováno v:
Surface and Coatings Technology. 47:730-739
Results on pulsed CO 2 laser damage of amorphous hydrogenated carbon coatings deposited onto silicon substrates are presented. The structural and optical changes induced by laser radiation were studied by scanning electron microscopy, Raman spectrosc
Autor:
V.Yu. Armeyev, V. G. Ralchenko, E.N. Loubnin, V. E. Strelnitsky, N I Chapliev, V.I. Mikhailov
Publikováno v:
Surface and Coatings Technology. 47:279-286
Annealing and etching of hydrogenated amorphous carbon films were performed in air and oxygen with a continuous wave Ar+ laser in direct writing mode. Raman spectroscopy, surface profilometry and secondary ion mass spectroscopy were used to study str
Publikováno v:
Applied Physics Letters. 58:2758-2760
Secondary‐ion mass spectrometry was used to measure the amount of hydrogen retained in dense (ρ =2.4 g/cm3) amorphous hydrogenated carbon films subjected to Ar+ laser annealing in intensity range I=(1–6)×105 W/cm2. Hydrogen effusion, accelerati
Autor:
Victor Ralchenko, A. V. Semenov, V. M. Puzikov, Bruce E. Warner, S. A. Uglov, Sergei M. Klimentov, V. E. Strelnitsky, Serge V. Garnov, A.A. Smolin, Elena D. Obraztsova
Publikováno v:
Lasers in Synthesis, Characterization, and Processing of Diamond.
We report on deposition and laser damage test of DLC coatings on silica plates and tip of 0.4 mm diameter fibers. The carbon films were produced by three techniques: (i) pulsed CO2 laser sputtering of glassy carbon targets in high vacuum; (ii) mono-e
Publikováno v:
SPIE Proceedings.
Diamond-like carbon films with mass density, ranging from 1.7 g/cm3 to 2.4 g/cm3, deposited onto Si in RF glow discharge plasma in benzene were characterized by various techniques in order to obtain a correlation between mechanical, electrical, optic
Autor:
N I Chapliev, A. H. Arslanbekov, V. E. Strelnitsky, V.Yu. Armeyev, Vitali I. Konov, V. G. Ralchenko
Hard amorphous hydrogenated carbon (a-C:H) films are tested as potential active write-once medium for optical data storage. The recording mechanism is based on blister (bubble) formation due to adhesion fail assigned to the hydrogen evolution in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab454b9b83b558741cd0de8b776ece7
https://doi.org/10.1016/b978-0-444-89162-4.50127-5
https://doi.org/10.1016/b978-0-444-89162-4.50127-5
Autor:
N I Chapliev, V. Y. Armeyev, A. Y. Volkov, Victor Ralchenko, V. E. Strelnitsky, Vitali I. Konov
Publikováno v:
SPIE Proceedings.
Continuous wave laser microprocessing of diarrnd-1ike carbon films deposited on silicon is reported The conductive lines of 3-15 pm width with resistivity Lj . jo—2 ccm were formed into dielectric amcrphous film via its graphitization as evidenced