Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V. E. Shunkov"'
Autor:
V. E. Shunkov, P. I. Sevostyanov
Publikováno v:
Вестник Российского экономического университета имени Г. В. Плеханова, Vol 0, Iss 3, Pp 197-206 (2024)
Energy transition from power-engineering of fossil fuel to low-carbon power-engineering requires great amounts of minerals. The growth in global demand for real-earth metals brings serious pressure on today’s supply. Among necessary minerals rear-e
Externí odkaz:
https://doaj.org/article/d685ed10bbcd4f24b39e770a4f2a861e
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 498:012005
This paper discusses the degradation of the dynamic performance in switched capacitors based on successive approximation analog-to-digital converters (SAR ADCs), caused by the resistance of the switch, which connects a voltage reference to a common b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b448c0b116c71bc6c1de5ce9de7cbb5a
https://doi.org/10.1088/1757-899x/498/1/012005
https://doi.org/10.1088/1757-899x/498/1/012005
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 151:012034
Integrated circuit (IC) of point-of-load DC-DC converter is presented. It is intended mainly for use in distributed power systems as a stand-along IC or as an on-chip block of the system-on-chip. The converter is based on multiphase switched-capacito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0759d870b200196e4c9c915c92e45e45
https://doi.org/10.1088/1757-899x/151/1/012034
https://doi.org/10.1088/1757-899x/151/1/012034
Publikováno v:
SPIE Proceedings.
Parasitic bipolar effect can significantly decrease SEE tole rance of modern deep submicron bulk and SOI CMOS devices due to amplification of charge collected in interaction between silicon and single ionizing particles. This article is dedicated to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b011523f71cd6bf987d5112d607a877f
https://doi.org/10.1117/12.802479
https://doi.org/10.1117/12.802479