Zobrazeno 1 - 10
of 10
pro vyhledávání: '"V. E. Gorbachev"'
Publikováno v:
Photoelectronics. :46-57
The possibility of using the method of combining several sensor elements with opposite sensitivity to various external influences to obtain new designs of sensors for light, temperature and magnetic field has been experimentally investigated. Standar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48875eb3c86c57d0af7c23d252bfb38e
https://doi.org/10.18524/0235-2435.2021.30.262855
https://doi.org/10.18524/0235-2435.2021.30.262855
Publikováno v:
Radioelectronics and Communications Systems; Vol. 64 No. 6 (2021); 310-318
Radioelectronics and Communications Systems; Том 64 № 6 (2021); 310-318
Radioelectronics and Communications Systems; Том 64 № 6 (2021); 310-318
The influence of temperature and ionized radiation on the properties of current stabilizers, based on JFETs with p-n-junction as a gate and MOSFETs in saturation mode at two-pole connecting when the gate and source are closed, is experimentally inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ebb887f6fc1e4641f3c8150a51e5e54
https://doi.org/10.3103/s0735272721060042
https://doi.org/10.3103/s0735272721060042
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 45-50 (2020)
The study considers the reasons and mechanisms of degradation of reverse characteristics of varicaps with aluminum-based ohmic contacts. The authors present and analyze the experimental results on how gettering affects the reverse current of varicaps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51615efe896b3295a8d4776b61fdc809
https://doi.org/10.15222/tkea2020.1-2.45
https://doi.org/10.15222/tkea2020.1-2.45
Publikováno v:
Radioelectronics and Communications Systems; Vol. 63 No. 7 (2020); 368-375
Radioelectronics and Communications Systems; Том 63 № 7 (2020); 368-375
Radioelectronics and Communications Systems; Том 63 № 7 (2020); 368-375
The possibility of sensitivity increasing of magnetic field sensors by combining different types of sensitive elements in one sensor circuit is experimentally investigated. For this purpose, four new sensor constructions are proposed: based on bridge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8961399696b61497b6da13e852dc262a
http://radioelektronika.org/article/view/S0735272720070043
http://radioelektronika.org/article/view/S0735272720070043
Publikováno v:
Journal of Communications Technology and Electronics. 63:399-402
The possibility of increasing the sensitivity of radiation sensors based on the field effect transistors is experimentally studied. A bridge circuit connecting two transistors with positive sign of the radiation sensitivity and two transistors with n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935b9b6e017dbb07dc51fd577558bee4
https://doi.org/10.1134/s1064226918040137
https://doi.org/10.1134/s1064226918040137
Publikováno v:
Semiconductors. 51:1354-1359
The influence of the effective concentration of an impurity specifying the conduction type of the base region and the base thickness on the radiation resistance of transistor temperature sensors is investigated. The dependences of the forward voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f36c30313117a56546e9c0aebe4aeb
https://doi.org/10.1134/s1063782617100190
https://doi.org/10.1134/s1063782617100190
Publikováno v:
Radioelectronics and Communications Systems; Том 60, № 9 (2017); 401-404
The possibility of developing radiation detectors based on field-effect transistors (FET) is investigated. Transistor saturation current is chosen as an informative parameter for modeling. Experimental results show that the drain saturation current o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d6c8431616b26af3f7164381bec8868
http://radioelektronika.org/article/view/S0735272717090035
http://radioelektronika.org/article/view/S0735272717090035
Publikováno v:
physica status solidi (b). 128:K59-K63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbac98cf744f2705e6145245e22e5c1d
https://doi.org/10.1002/pssb.2221280152
https://doi.org/10.1002/pssb.2221280152
Publikováno v:
physica status solidi (b). 133:285-296
The spatial valence electron distribution in silicon and diamond is calculated in adiabatic bond charge approximation at zero temperature when bond charges have Gaussian shape and their tensor character is taken into account. Agreement between theory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae151fafb8f431cf59567873a58b7f3
https://doi.org/10.1002/pssb.2221330133
https://doi.org/10.1002/pssb.2221330133
