Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V. E. Chygrynov"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 2, Pp 307-315 (2016)
The general mechanism of thermale vaporation in vacuum of chalcogenide (oxide) metal – germanium composites is established. Thermodynamic calculations define values of conditional temperatures which are essentially lowerin comparis on with such for
Externí odkaz:
https://doaj.org/article/85139eb60b1740ed9de04e4640ddde72
Autor:
V. F. Zinchenko, I. R. Magunov, N. A. Chivireva, S. V. Stoyanova, V. E. Chygrynov, O. S. Mazur, Ie. V. Timukhin, O. V. Mozkova, G. I. Kocherba
Publikováno v:
Vìsnik Odesʹkogo Nacìonalʹnogo Unìversitetu: Hìmìâ, Vol 19, Iss 1(49), Pp 22-31 (2015)
The structure and properties of film-forming material ZnS containing oxide impurity are studied. Methods of the chemical analysis and spectroscopic research of products of exchange reactions establish the content of ZnO at level of 3-4 % mass, and al
Externí odkaz:
https://doaj.org/article/ed2aa36c92ef47ae8c683e0d35a213af
Autor:
V. F. Zinchenko, Іe. V. Timukhin, O. G. Eremin, N. A. Chivireva, V. E. Chygrynov, O. V. Mozkova, G. I. Kocherba
Publikováno v:
Vìsnik Odesʹkogo Nacìonalʹnogo Unìversitetu: Hìmìâ, Vol 18, Iss 2(46), Pp 41-48 (2014)
The structure and properties of film-forming material MgF2 containing oxide impurity are studied. Material shows a low level of adaptability to manufacture in the course of the thermal evaporation in vacuum and operational parameters of received coat
Externí odkaz:
https://doaj.org/article/382387d2fcd342d09db73c3df782e05e
Autor:
G. I. Kocherba, V. E. Chygrynov, Ie. V. Timukhin, N. A. Chivireva, S. V. Stoyanova, I. R. Magunov, V. F. Zinchenko, O. S. Mazur, O. V. Mozkova
Publikováno v:
Vìsnik Odesʹkogo Nacìonalʹnogo Unìversitetu: Hìmìâ, Vol 18, Iss 2(46), Pp 41-48 (2014)
The structure and properties of film-forming material ZnS containing oxide impurity are studied. Methods of the chemical analysis and spectroscopic research of products of exchange reactions establish the content of ZnO at level of 3-4 % mass, and al