Zobrazeno 1 - 10
of 206
pro vyhledávání: '"V. E. Borisenko"'
EFFECT OF SUNLIGHT ON THE ELECTRICAL CHARACTERISTICS OF THE HETEROSTRUCTURE TITANIUM DIOXIDE/SILICON
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7 (125), Pp 136-143 (2019)
Electrical characteristics of the heterostructure titanium dioxide/silicon illuminated by the sun light were theoretically modeled. The modeling process includes consideration of generation of the charge carriers and their transport through the pract
Externí odkaz:
https://doaj.org/article/e3919064bc884c4fabf0b13d8be20b43
EFFECT OF INTRODUCTION SAS ON THE STRUCTURE OF THICK FILMS OF SILICATE GLASS AND NANOSTRUCTURED TiO2
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 10-13 (2019)
Photocatalytically active porous films as thick as 20 µm were fabricated from the paste composed of sodium silicate solute and nanodispersed TiO2 powder and SAS fired at 200 °С on glass substrates. It was shown, that the porosity of films can be e
Externí odkaz:
https://doaj.org/article/5808c842637748bfbcf82c122279dc83
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 6, Pp 50-55 (2019)
Photocatalytically active porous films as thick as 20 µm were fabricated from the paste composed of sodium silicate solute and nanodispersed TiO2 powder fired at 200 to 400°С on glass substrates. It was shown, that the porosity of films can be ext
Externí odkaz:
https://doaj.org/article/8bbe3fd1bd734252899d05e65134ae5d
Autor:
V. E. Borisenko
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 5-13 (2019)
It is a short review of the most valuable theoretical and experimental results obtained in the center of nanoelectronics and novel materials. Electronic and optical properties of nanostructured porous silicon, quantum films and wires of silicon and g
Externí odkaz:
https://doaj.org/article/83a70f82ebbf4215b6a87c4d17d5b069
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 5, Pp 12-16 (2019)
An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography an
Externí odkaz:
https://doaj.org/article/efe5228614db45dbb154a392fcdd96dd
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 5, Pp 34-37 (2019)
Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon d
Externí odkaz:
https://doaj.org/article/f1a54e39f98a41278368c304b8883e45
Autor:
V. E. Borisenko, A. V. Krivosheeva, D. B. Migas, V. A. Pushkarchuk, A. B. Filonov, V. L. Shaposhnikov
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 73-84 (2019)
The results of theoretical modeling from the first principles of atomic structure and properties of promising low-dimensional structures from semiconductors, performed for the past five years at the Center of Nanoelectronics and Novel Materials of Be
Externí odkaz:
https://doaj.org/article/36e644b01eed4b2fba30374480474ee3
Autor:
V. E. Borisenko, L. M. Lynkou
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 5-16 (2019)
The biography and information about the main achievements of the doctor of technical sciences, professor, academician of the National Academy of Sciences of Belarus, a foreign member (academician) of the Russian Academy of Sciences Vladimir Labunov a
Externí odkaz:
https://doaj.org/article/47de819f9732411db6f09b273ac1d1e0
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 98-101 (2019)
The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap sem
Externí odkaz:
https://doaj.org/article/08e5a2f324c7404b80b2110bf913f42e
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 41-47 (2019)
Modeling of anode and gate characteristics of solid-state vacuum microtriode was made in this work. The calculated characteristics were compared with experimental ones. Dependencies of steepness and internal resistance were calculated. Microtriode ga
Externí odkaz:
https://doaj.org/article/439367d826ff47c3accb53bca8fedaf7