Zobrazeno 1 - 10
of 72
pro vyhledávání: '"V. Dudek"'
Schottky diodes designed with negative breakdown voltages of up to 400 V are used in applications like power supplies, motor drives, battery charging and server/data centers. GaAs is an ideal choice for such devices. Due to its high electron mobiliti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0084037d0f6562c9ac48758dcc6fbef
https://publica.fraunhofer.de/handle/publica/442296
https://publica.fraunhofer.de/handle/publica/442296
Publikováno v:
2021 International Semiconductor Conference (CAS).
The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5307b04a05628debbd6f8dbac6cf0a0b
https://doi.org/10.1109/cas52836.2021.9604151
https://doi.org/10.1109/cas52836.2021.9604151
Autor:
Steven C. Witczak, Jeremiah J. Horner, James S. Hack, Norman P. Goldstein, Paul V. Dudek, Brainton U. Song, Scott R. Messenger, Glen E. Macejik, Thomas J. Knight
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a08a2a456edf96d56da909595459a59
https://doi.org/10.1109/radecs50773.2020.9857696
https://doi.org/10.1109/radecs50773.2020.9857696
Akademický článek
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Autor:
Qing-Tai Zhao, M. Wiemer, V. Dudek, Sven Zimmermann, H. Höhnemann, Siegfried Prof. Dr. Mantl, Thomas Gessner, C. Kaufmann
Publikováno v:
Microelectronic Engineering. 84:2537-2541
The material CoSi"2 is preferred for the fabrication of buried silicide films between silicon device layer and buried oxide of SOI substrates for BICMOS integrations. Such an application needs excellent quality of the interface between the silicide a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8323b5b347dd35c618d3d7289324609d
https://doi.org/10.1016/j.mee.2007.05.056
https://doi.org/10.1016/j.mee.2007.05.056
Autor:
V. Dudek, Thomas Gessner, Qing-Tai Zhao, Siegfried Prof. Dr. Mantl, Sven Zimmermann, M. Wiemer, C. Kaufmann, H. Höhnemann
Publikováno v:
Microelectronic Engineering. 83:2112-2116
The fabrication of a new silicon on silicide on insulator (SSOI) substrate for the integration of bipolar and CMOS devices on the same wafer is demonstrated. This structure includes a 500nm thick buried oxide (BOX) and a 90nm patterned cobalt disilic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca728643424d8b18fbc0830b42ae7e8
https://doi.org/10.1016/j.mee.2006.09.015
https://doi.org/10.1016/j.mee.2006.09.015
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:377-385
This paper discusses the impact of the back-gate bias on the on-state drain breakdown voltage of high-voltage silicon-on-insulator (SOI) MOSFETs. This is mandatory in order to understand the physical mechanisms behind the limitations of the safe oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1d345759c0669fc8d4264d3644d406f
https://doi.org/10.1109/tdmr.2006.883128
https://doi.org/10.1109/tdmr.2006.883128
Autor:
Sven Zimmermann, C. Kaufmann, H. Höhnemann, Qing-Tai Zhao, V. Dudek, B. Trui, Siegfried Prof. Dr. Mantl, Maik Wiemer, H. L. Bay
Publikováno v:
Semiconductor Science and Technology. 21:157-161
A silicon-on-metal-on-insulator substrate, consisting of a top Si layer, a buried CoSi2 layer and a buried SiO2 layer on a Si (1 0 0) substrate was formed using Co silicidation, wafer bonding and wafer splitting. It is shown that the buried silicide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::054f59fb5ef7c35c8f5ce098c81f1b12
https://doi.org/10.1088/0268-1242/21/2/010
https://doi.org/10.1088/0268-1242/21/2/010
Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications
Autor:
C. Kaufmann, Qing-Tai Zhao, Siegfried Prof. Dr. Mantl, V. Dudek, Sven Zimmermann, T. Gessner, Maik Wiemer, B. Trui
Publikováno v:
Microelectronic Engineering. 82:454-459
The successful fabrication of a silicon on metal on insulator (SOMI) substrate with a structured buried silicide layer for BICMOS applications is shown in this paper. The cobalt silicide is used as the buried silicide layer in the SOMI substrate beca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455a0e3f7aca7843c214fad8f30f573d
https://doi.org/10.1016/j.mee.2005.07.042
https://doi.org/10.1016/j.mee.2005.07.042
Publikováno v:
IEEE Transactions on Electron Devices. 52:1649-1655
This paper discusses for the first time the impact of the back-gate bias on lateral DMOS (LDMOS) transistors on silicon-on-insulator (SOI) substrates. An analytical model that takes the back-gate bias and the device parameters into account is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc94a8fca493309aa8df2e4b4c023ee8
https://doi.org/10.1109/ted.2005.850952
https://doi.org/10.1109/ted.2005.850952