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Measurement of base and collector transit times in thin-base InGaAs/InP HBT

Autor: V. Dhalluin, F. Alexandre, Muriel Riet, Jean Godin, M. Kahn, Ph. Berdaguer, Sylvain Blayac

Publikováno v: IEEE Electron Device Letters. 24:430-432

The influence of base thickness reduction on performances of heterojunction bipolar transistors (HBTs) is examined. HBT structures are grown, with a base thickness in the range 25-65 nm and doping concentration from 3/spl times/10/sup 19/ to 6/spl ti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7438d671ab5d97c6131b065309a9da78
https://doi.org/10.1109/led.2003.815005

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Effect of base thickness reduction on high speed characteristics and base resistance of InGaAs/InP heterojunction bipolar transistor

Autor: Sylvain Blayac, Muriel Riet, P. Berdaguer, F. Alexandre, Jean Godin, Frédéric Aniel, V. Dhalluin, M. Kahn

Publikováno v: International Conference onIndium Phosphide and Related Materials, 2003..

Influence of base thickness reduction on performances of IC-oriented OPTO+ DHBT technology is presented. HBTs structures are grown, with base thickness in the 25 - 65 nm range and doping concentration from 3 /spl times/ 10/sup 19/ at/cm/sup 3/ to 6 /

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86bf6d1d7c6f531495ba038c7398130a
https://doi.org/10.1109/iciprm.2003.1205331

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InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits

Autor: Jean Godin, Sylvain Blayac, A. Kasbari, Agnieszka Konczykowska, J. Moulu, Muriel Riet, A. Pinquier, V. Dhalluin, M. Kahn, P. Berdaguer, F. Alexandre

Publikováno v: 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

In this paper, we present our InP DHBT technology with improved performances, yield and uniformity; and some new design tools, both of which have allowed us to achieve 40+ Gbit/s full-rate-clock circuits, such as the D-flip-flop. These circuits have

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87543b3debae6771352e3367b012ef3c
https://doi.org/10.1109/gaas.2002.1049063

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Hybridization of SOAs on Si platform for routing applications

Autor: A. Goth, S. Squedin, D. Auvinet, P. Piatti, C. Drocourt, Francois Dorgeuille, D. Legat, C. Porcheron, N. Sahri, Frederic Pommereau, S. Silvestre, J.C. Remy, Monique Renaud, V. Dhalluin, D. Keller, M. Prunaire, J. Scherb, M. DiMaggio, P. Aribaud

Publikováno v: Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Hybridization of SOA active component on passive Si or SiO/sub 2//Si platform provides a key building block for DWDM optical networks and advanced optical signal processing. Hybrid approach allows to reach high performances and cost effective solutio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46faeffe26b31ff6f94fa4f3d3b972a4
https://doi.org/10.1109/iciprm.2002.1014468

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