Zobrazeno 1 - 10
of 30
pro vyhledávání: '"V. Detcheva"'
Autor:
V Detcheva, V Spassov
Publikováno v:
Physics Education. 28:39-42
The amplitude-dependent period and the law of motion of a simple but very instructive nonlinear (cube-law) mechanical oscillator are studied both analytically and numerically. Special attention is paid to the application of energy conservation and to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a091bd26eacb2d45a4fe5c08be90a7b4
https://doi.org/10.1088/0031-9120/28/1/007
https://doi.org/10.1088/0031-9120/28/1/007
Publikováno v:
physica status solidi (b). 129:271-277
The effective masses of the electrons in monatomic and diatomic crystals are derived on the basis of one-dimensional models and in the framework of a relevant transfer matrix. From the general expression thus obtained the particular cases correspondi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ecacb44bf51a1a21316e3e14c75afc5
https://doi.org/10.1002/pssb.2221290126
https://doi.org/10.1002/pssb.2221290126
Autor:
B. D. Kandilarov, V. Detcheva
Publikováno v:
Physica Status Solidi (b). 96:877-882
Relations between band-edge discontinuities and interface potential step are derived in the framework of the two-band narrow-gap approach and in terms of gap-attached bulk properties of the two semiconductors in epitaxial contact. The expressions, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5946508ba7d634cfb4159b9ccd1acdf
https://doi.org/10.1002/pssb.2220960244
https://doi.org/10.1002/pssb.2220960244
Publikováno v:
physica status solidi (b). 152:163-169
A relativistic generalization of the effective-mass concept is worked out on the basis of simplest one-dimensional model of diatomic crystals and in the framework of the Dirac equation approach. The numerical analysis performed leads to reasonable va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::394a66ba1faef1ad39bd759a2bd0bce0
https://doi.org/10.1002/pssb.2221520118
https://doi.org/10.1002/pssb.2221520118
Autor:
V Detcheva, B.D Kandilarov
Publikováno v:
Thin Solid Films. 36:107-111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7017cfd25c25fd5d203b999fe0e289e
https://doi.org/10.1016/0040-6090(76)90414-4
https://doi.org/10.1016/0040-6090(76)90414-4
Publikováno v:
Czechoslovak Journal of Physics. 39:696-701
A relativistic generalization of the effective mass concept is developed within the framework of simplest one-dimensional models by using Dirac equation and the transfer-matrix approach. The numerical analysis performed makes possible a comparison wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a1548b816c616f707def40c3573b598
https://doi.org/10.1007/bf01598446
https://doi.org/10.1007/bf01598446
Publikováno v:
Journal of Physics C: Solid State Physics. 12:3401-3408
The influence of small and moderate deformations of the interface spacing on the existence of interface states is discussed on the basis of a generalised one-dimensional model and by using a scattering theoretical method. The method applies equally w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d377a1a3e6effed86203de736a5e6a
https://doi.org/10.1088/0022-3719/12/16/028
https://doi.org/10.1088/0022-3719/12/16/028
Publikováno v:
physica status solidi (b). 70:775-783
The necessary and sufficient conditions for the existence of interface states in a heterojunction between a one-atomic and a two-atomic crystal are derived on the basis of a linear model using the scattering theoretical method of Saxon and Hutner. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b69898b848a54114f5a460447c14ecff
https://doi.org/10.1002/pssb.2220700238
https://doi.org/10.1002/pssb.2220700238
Publikováno v:
Physica Status Solidi (b). 86:425-430
Necessary and sufficient conditions for the existence of interface states localized at the interface in two one-dimensional models of deformed heterojunctions are derived in terms of a scattering theoretical method. The existence conditions thus obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::407901c475baa0f44ee0874d27fef44f
https://doi.org/10.1002/pssb.2220860150
https://doi.org/10.1002/pssb.2220860150
Autor:
B D Kandilarov, V Detcheva
Publikováno v:
Journal of Physics C: Solid State Physics. 11:L919-L922
The existence of interface states in semiconductor heterojunctions with vanishing conduction-band discontinuity is discussed in terms of the two-band narrow-gap approximation. Contrary to the result recently obtained by Tejedor and Flores (1978), it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31afe9e0a4814838b71294e1ae25e268
https://doi.org/10.1088/0022-3719/11/23/005
https://doi.org/10.1088/0022-3719/11/23/005